2SAR554PT100 Allicdata Electronics
Allicdata Part #:

2SAR554PT100-ND

Manufacturer Part#:

2SAR554PT100

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 80V 1.5A MPT3
More Detail: Bipolar (BJT) Transistor PNP 80V 1.5A 340MHz 2W Su...
DataSheet: 2SAR554PT100 datasheet2SAR554PT100 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.15407
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 2W
Frequency - Transition: 340MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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2SAR554PT100 application field and working principle

2SAR554PT100 application field and working principle

The 2SAR554PT100 is a bipolar junction transistor (BJT) that is used for various types of applications, typically for power applications. This type of transistor is made up of three layers of semiconductor material that form a junctions called the "base-emitter" and the "collector-base" junctions. These junctions are responsible for controlling the flow of current in the circuit. The 2SAR554PT100 device is a current-driven device, meaning that when a current is applied to the base of the device, a voltage will be generated across the emitter and collector junctions.

The 2SAR554PT100 is mainly used in steep-slope switch circuits, where it is used to switch large current levels with a low level of base current. This type of transistor provides a high gain and can withstand large collector-to-emitter voltage drops. This type of device is also used in power amplifier circuits, as it is able to provide large transient current swings and low distortion levels. In addition, this type of device can also be used in power converter circuits, where its high voltage breakdowns and high current gains make it a suitable choice.

The 2SAR554PT100 is basically an NPN type of transistor and works on the principle of an N-type semiconductor material being placed at the base of the transistor and a P-type material at the emitter. When a current flow is applied at the base side of the device, the electrons start to flow from the emitter side and the holes or the positive carriers are drawn towards the emitter end of the transistor. This action increases the conductivity in the transistor and hence, the current flow increases. The base-emitter junction acts as a forward battery and as the current flow increases, the voltage across the emitter and collector junction goes higher.

In addition to this, the 2SAR554PT100 offers a wide range of additional benefits like high current gain, low-noise operation, high switching speed, good thermal characteristics and low leakage current. This type of transistor is also very resistant to thermal and electrical stress and can handle large voltage and current levels.

In conclusion, the 2SAR554PT100 is a versatile bipolar junction transistor that is used for several types of applications, such as power switching, signal amplifiers and power converters. Its high voltage breakdowns, current gains and low noise operation make it a suitable choice for many applications. It is also very resistant to thermal and electrical stress, making it suitable for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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