2SAR552P5T100

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2SAR552P5T100 is a single bipolar junction transistor (BJT). BJTs are three-terminal devices, consisting of a collector and emitter connected by a base. 2SAR552P5T100 is an NPN-type transistor, meaning it is composed of a group of negative and positive layers, with the negative layer sandwiched between the positive layers. It has a maximum collector-emitter voltage of 50 volts, a maximum collector-base voltage rating of 80 volts and an operating temperature range from -55°C to +125°C.

The application field of the 2SAR552P5T100 is wide and varied, and it is commonly used for general-purpose switching and amplifier applications. It is also used in power supplies, audio and video systems, consumer electronics, automotive systems and communication systems. The 2SAR552P5T100 is designed to provide outstanding DC parameters with minimal current gain (Beta) variation versus temperature. It is ideal for use in power electronic designs, where high-current circuits can be switched with quieter and more efficient operation, while incorporating EMI filtering.

The working principle of the 2SAR552P5T100 is based on the fact that when current is applied to the base, the collector–emitter current (I_CE) flows. The transistors inside the device are responsible for amplifying the small input current and turning it into a larger output current. The base–emitter junction acts like a diode and is responsible for controlling the amount of current that flows through the collector–emitter region. It also controls the open voltage at the base terminal, which depends on the collector current. The efficiency of the transistor depends on the type of BJT and its quality.

2SAR552P5T100 is designed to offer excellent yield and reliability, with high-speed switching and low switching noise. It features high current handling capability and a low noise figure. This makes it well suited for use in high speed, power saving applications. It has good thermal stability, well-suited for high frequency applications, and is also suitable for use in applications where space is at a premium. In addition, it is environmentally friendly and less expensive than other types of transistors

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