| Allicdata Part #: | 2SAR553RTLTR-ND |
| Manufacturer Part#: |
2SAR553RTL |
| Price: | $ 0.14 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PNP 50V 2A TSMT3 |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 320MHz 1W Surf... |
| DataSheet: | 2SAR553RTL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.14000 |
| 10 +: | $ 0.13580 |
| 100 +: | $ 0.13300 |
| 1000 +: | $ 0.13020 |
| 10000 +: | $ 0.12600 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 35mA, 700mA |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 50mA, 2V |
| Power - Max: | 1W |
| Frequency - Transition: | 320MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-96 |
| Supplier Device Package: | TSMT3 |
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Bipolar Junction Transistors (BJTs) are commonly used in analog and digital electronics. BJTs can be classified as either single or dual (two) components depending on the configuration. The 2SAR553RTL BJT is a single-component device, used for various applications. This article will discuss the application fields and working principles of the 2SAR553RTL BJT.
The 2SAR553RTL BJT is a NPN type device, featuring an extended base width and low collector current leakage. It is commonly used for applications such as driver circuits, high-frequency switching, and power amplifiers. The 2SAR553RTL BJT can also be employed in various types of circuits such as Darlington pairs, current mirrors, switch-mode power supplies, and current-limiting circuits.
The 2SAR553RTL BJT has three major components: emitter, base and collector. The emitter is the negative end of the BJT, located closest to the collector. It is where the electrons are emitted from the transistor. The base is the middle layer of the BJT, which acts as a control for the flow of current between the collector and the emitter. The collector is the positive end of the BJT and is where the electrons are collected from the collector.
In order to understand the working principle of the 2SAR553RTL BJT, it is important to understand the concept of current flow in electronic circuits. A current flow in an electronic circuit is usually caused by a bias voltage, which is applied to the transistor. In a BJT, the emitter-base junction is forward biased, which allows the electrons to flow from the emitter to the base.
The BJT will then become fully switched on and the current starts to flow from the base to the collector. This current flow can be increased or decreased by changing the bias voltage, which is achieved by altering the external components in the circuit.
The 2SAR553RTL BJT also features a built-in switching rate limiting resistor, which helps limit the maximum current flow in the circuit. This is especially helpful for high frequency switching circuits, as it limits the amount of power lost as heat.
The 2SAR553RTL BJT is also ideally suited for driver circuits, as it is able to deliver high current with very low voltage drop. This makes it very efficient for applications such as LED drivers and motor drivers.
In summary, the 2SAR553RTL BJT is a single-component device, used for various applications such as driver circuits, high-frequency switching, and power amplifiers. The internal structure of the BJT consists of the emitter, base and collector sections and the current flow is controlled by biasing the transistor. Additionally, the 2SAR553RTL BJT also features a built-in switching rate limiting resistor, allowing it to be used in high frequency switching circuits.
The specific data is subject to PDF, and the above content is for reference
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2SAR553RTL Datasheet/PDF