2SAR513PT100 Allicdata Electronics
Allicdata Part #:

2SAR513PT100TR-ND

Manufacturer Part#:

2SAR513PT100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 50V 1A MPT3
More Detail: Bipolar (BJT) Transistor PNP 50V 1A 400MHz 2W Surf...
DataSheet: 2SAR513PT100 datasheet2SAR513PT100 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Power - Max: 2W
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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2SAR513PT100 is a single bipolar junction transistor, typically used in a wide range of applications. It can be used to switch or amplify signals, or as a multi-purpose amplifier. It is available in various packages, making it suitable for a range of different designs.

2SAR513PT100 has a forward-biased collector-to-base junction and a reverse-biased collector-to-emitter junction. It\'s collector current is dependent on the base current, so when the base current is increased, the collector current increases as well. It also has a voltage gain of hfe is typically around 130, meaning it amplifies by a factor of 130. This makes it particularly useful for applications requiring a high gain.

2SAR513PT100 is well-suited for many applications, including radio frequency amplifiers, audio power amplifiers, power supplies, and switching circuits. In radio frequency amplifiers, it is used to amplify signals at various frequencies. Audio power amplifiers, on the other hand, require high gain, so the 2SAR513PT100 is a great choice. Power supplies and switching circuits can both benefit from 2SAR513PT100, as they require a device capable of switching large amounts of current.

In terms of working principle, the 2SAR513PT100 relies on two main factors: minority carrier injection (MCI) and base resistance. MCI occurs when electrons and holes are injected into the base region, which in turn increases the current flow between the emitter and collector. Base resistance, meanwhile, is the opposition to current flow between the base-emitter junction and the base-collector junction. As current increases, the base resistance decreases, allowing more current to flow between the emitter and collector.

In conclusion, the 2SAR513PT100 is a single bipolar junction transistor well-suited to a variety of applications. It features both a gain of hfe of 130 and MCI and base resistance, making it a reliable and effective choice. The versatility of the 2SAR513PT100 makes it a popular choice among designers for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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