2SC3356-T1B-R25-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SC3356-T1B-R25-A transistor is a RF or radio frequency transistor developed by Toshiba Semiconductor and Storage Corporation. It is a Bipolar Junction Transistor (BJT). This type of transistor is used for high frequency switching and amplification in electronic devices.

The 2SC3356-T1B-R25-A is a small signal, single-pole NPN transistor. It is designed for use in general-purpose applications such as low and medium power amplification, switching, and other RF and AF applications. It has a very low noise and high gain. Other features include low capacitance, high breakdown voltage, and excellent linearity.

The 2SC3356-T1B-R25-A transistor has a maximum collector-emitter voltage of 25 volts, a maximum collector-base voltage of 30 volts, a maximum collector current of 150 milliamps, and a maximum power dissipation of 400 milliwatts. It has a gain cut-off frequency of 1 MHz, a forward transfer capacitance of 16pF, and an emitter-base cut-off frequency of 18 MHz. The transistor has a minimum breakdown voltage Uce of 30V.

The working principle of the 2SC3356-T1B-R25-A transistor is based on the bipolar junction transistor. It consists of three terminals, the emitter, the base, and the collector. The current flowing from the emitter to the base is controlled by the amount of current flowing from the collector to the base. The collector current flow is proportional to the base current flow, making the transistor an ideal device for current flow control.

The 2SC3356-T1B-R25-A transistor is widely used in the field of radio frequency and wireless technology. It is used in applications such as wireless base stations, wireless repeaters, wireless transceivers, and wireless transponders. It is also used in other electronics circuits such as amplifiers, oscillators, and mixers. In radio frequency applications, it is typically used for RF signal amplification and switching.

In addition, the 2SC3356-T1B-R25-A transistor is also used for medical instruments, TV tuners, and audio circuits. It is also used for low frequency power amplification in audio amplifiers, computer peripherals, and other applications.

In summary, the 2SC3356-T1B-R25-A transistor is a RF transistor developed by Toshiba and is ideal for high frequency switching and amplification applications in a variety of fields. It is a low noise, high gain, low capacitance, and high breakdown voltage transistor. It is commonly used in wireless base stations, wireless transceivers, amplifiers, oscillators, mixers, and other circuits. It provides excellent linearity, making it an ideal choice for current flow control.

The specific data is subject to PDF, and the above content is for reference