Allicdata Part #: | 2SC3665-Y(T2NSWFM-ND |
Manufacturer Part#: |
2SC3665-Y(T2NSW,FM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V SC71 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 1W ... |
DataSheet: | 2SC3665-Y(T2NSW,FM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-71 |
Supplier Device Package: | MSTM |
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The 2SC3665-Y(T2NSW,FM) Transistor is a single bipolar junction transistor (BJT) specifically designed for use in small signal amplification. It has been particularly popular in power amplifier design and is suitable for a number of other applications. In this article we will take a closer look at the features, application field and working principle of the 2SC3665-Y(T2NSW,FM).
The 2SC3665-Y(T2NSW,FM) is constructed as an NPN bipolar junction transistor (BJT) with an emitter, base and collector. It is available in TO-3PN, TO-126, and SOT-323 SMD packages which are all suitable for surface mount applications. The device has a maximum rated collector-emitter voltage of 25V, maximum collector current of 3.5A and a maximum power dissipation of 26W.The device features low ON-Resistance making it a suitable choice for high frequency applications such as switching regulators, motor drive circuits and high current amplifiers.
A major area of application for the 2SC3665-Y(T2NSW,FM) is power amplifier design where it has become a popular choice due to its high power handling capabilities. The transistor can be used to design power audio amplifiers, power amplifiers for automotive applications and other high power audio applications. The device also provides good linearity at high powers and can handle high peak currents which makes it a suitable option for many power amplification applications.
The 2SC3665-Y(T2NSW,FM) also finds application in automotive, LED driver and other lighting circuits, precision rectifiers and other current control circuitry. It is also suitable for switching regulator and motor drive circuits. The device is also used in RF amplifiers, RF transmitters and antenna amplifiers.
The operation and function of a 2SC3665-Y(T2NSW,FM) can be understood by looking at its internal structure. In NPN bipolar transistors, electrons from the emitter flow in the collector. The base acts as a control element and regulates the amount of current flowing from the emitter to the collector. When a positive voltage is applied to the base, the transistor is said to be forward biased and electrons flow from the emitter to the collector. The amount of current flowing through the transistor depends on the amount of base current.
The most important measure of a transistor’s performance is its gain, which is the ratio of collector current to base current (B). The gain of the 2SC3665-Y(T2NSW,FM) device is given by its hFE (VCE/IB) which is typically between 65 and 200. In order to achieve optimal performance, the operating temperature of the device should be between -40°C and 125°C.
The 2SC3665-Y(T2NSW,FM) Transistor is an ubiquitous device for power amplifiers, switching regulators, motor drivers and other current controlling applications. It is available in multiple packages and has a wide range of gains, making it a suitable option for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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