Allicdata Part #: | 2SC3669-YT2PASF(M-ND |
Manufacturer Part#: |
2SC3669-Y,T2PASF(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 2A 80V SC71 |
More Detail: | Bipolar (BJT) Transistor NPN 80V 2A 100MHz 1W Thro... |
DataSheet: | 2SC3669-Y,T2PASF(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-71 |
Supplier Device Package: | MSTM |
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The 2SC3669-Y,T2PASF(M is a bipolar junction transistor (BJT), more specifically a NPN device. It is designed for general purpose use, but is commonly used in applications like amplifiers, switching, and more.
The 2SC3669-Y,T2PASF(M has a maximum collector current rating of 800 mA, with a maximum collector dissipation rating of 1.0 W. It also has a DC Current Gain ranging from 200 to 400 (at Ic = 4.0 mA and Vce = 10 V). The maximum collector-base voltage rating is 100 V, and the maximum collector-emitter voltage rating is 350 V.
A BJT works by allowing charge carriers to control current flow between two terminals (an emitter and a collector). This is done by introducing a second (middle) terminal into the circuit, called a base. When a small current is allowed to flow through the base terminal, it activates the BJT, allowing a much larger current to flow from the emitter to the collector.
The 2SC3669-Y,T2PASF(M device is designed to be used as a general-purpose transistor, and can be used in many situations. It is popularly used in audio and switch amplifiers, as well as in many other applications that require a reliable, low power transistor. It can also be used for other applications that require a fast, small signal switch.
In terms of features, the 2SC3669-Y,T2PASF(M has a wide operating temperature range of -55 to +150C and a maximum forward current rating of 1A. The device also has a low collector-emitter saturation voltage VCE(sat), of typically 0.6 V at a collector current of 4 mA. This is a key aspect of the device, as it allows it to be used for higher efficiency switching applications.
The 2SC3669-Y,T2PASF(M also has some useful features for automotive applications. It features a low power dissipation at 300 mW, making it suitable for many automotive designs. Its fast switching capability, coupled with its low collector-emitter saturation voltage, allows it to be used in many automotive applications as well. As with all BJTs, the 2SC3669-Y,T2PASF(M also has an additional benefit of low-noise output which makes it useful in noise-sensitive applications.
In terms of safety features, the 2SC3669-Y,T2PASF(M has a wide current range of 1mA to 800mA and a maximum collector-emitter voltage rating of 350V. This enables it to be used in a range of safe applications, including automotive applications. The device also has a PNP complement, the 2SA3669-Y,T2PASF(M, which is its mirror image.
Overall, the 2SC3669-Y,T2PASF(M is a reliable and safe BJT transistor suitable for many applications. It has a wide current range, low collector-emitter saturation voltage, fast switching capability, and low power dissipation, making it ideal for applications ranging from audio and switch amplifiers, to automotive and other noise-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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