2SC3649S-TD-E Allicdata Electronics
Allicdata Part #:

2SC3649S-TD-EOSTR-ND

Manufacturer Part#:

2SC3649S-TD-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 160V 1.5A SOT89-3
More Detail: Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500m...
DataSheet: 2SC3649S-TD-E datasheet2SC3649S-TD-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 500mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PCP
Base Part Number: 2SC3649
Description

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The 2SC3649S-TD-E is a single bipolar junction transistor, making it an essential component for many types of electronic devices. It is an NPN transistor, meaning it has two P-type and one N-type semiconductor layers. This transistor is widely used due to its efficiency, reliability, and wide range of applications.

The 2SC3649S-TD-E can be used in many field applications, including high frequency switching, voltage amplifiers, analog circuits, and low power audio amplifiers. It is also commonly used for low power bias circuits, and for converter circuits.

This transistor features a maximum operating frequency of up to 400MHz, with a maximum gain of up to 0.69dB. It is equipped with a high breakdown voltage, with a maximum power dissipation of up to 500mW, and can be used in temperatures ranging from -55C to +150C. It is also equipped with a rated current of 2A and a rated voltage of 100V.

The 2SC3649S-TD-E transistors work in the same way as other transistors. It has three terminals, and each terminals has a specific purpose. The collector terminal receives a signal to be amplified, and is connected to a power source. The emitter terminal releases the amplified signal and is connected to a load, such as a speaker. The base terminal acts as a switch for the transistor, and enables it to amplify the incoming signal.

In the 2SC3649S-TD-E transistor, the base current is higher than the collector current, and the transistor is turned on. This occurs when the base–emitter voltage reaches a certain level. As current passes through the collector and increases, it produces an amplified output at the emitter. When the input current is removed, the transistor is turned off, and the amplifier is deactivated.

The 2SC3649S-TD-E transistor is typically used in digital circuits to convert a digital signal into an analog output. It is also used in circuits to reduce electrical noise, detect and limit voltage spikes, and generate sawtooth waveforms. It is also used in circuits to create a constant current source, to amplify signals, and to provide a voltage boost.

In summary, the 2SC3649S-TD-E is a single bipolar junction transistor that is versatile and reliable. It has a wide range of applications, from low power audio amplifiers to voltage amplifiers and high-frequency switching circuits. It is also equipped with a maximum operating frequency of up to 400MHz, a maximum gain of up to 0.69dB, and a maximum power dissipation of up to 500mW. It is a valuable device for many electronic circuits, and can help create reliable, efficient, and powerful devices.

The specific data is subject to PDF, and the above content is for reference

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