Allicdata Part #: | 2SC3835-ND |
Manufacturer Part#: |
2SC3835 |
Price: | $ 1.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | TRANS NPN 120V 7A TO3P |
More Detail: | Bipolar (BJT) Transistor NPN 120V 7A 30MHz 70W Thr... |
DataSheet: | 2SC3835 Datasheet/PDF |
Quantity: | 3468 |
1 +: | $ 1.80180 |
10 +: | $ 1.62981 |
25 +: | $ 1.45530 |
100 +: | $ 1.30977 |
250 +: | $ 1.16424 |
500 +: | $ 1.01871 |
1000 +: | $ 0.84407 |
2500 +: | $ 0.78586 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 7A |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 3A, 4V |
Power - Max: | 70W |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
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2SC3835 is a NPN n-channel epitaxial silicon planar transistor designed for use in audio, linear and switch applications.
The device is designed for low power or low noise operation at frequencies of up to 200MHz, depending on the application. 2SC3835 is an epitaxial silicon planar transistor which uses its collector as the source, its base as the gate, and its emitter as the drain. It has a frequency response range of up to 200MHz and is available in a variety of packages.
The 2SC3835 is a silicon planar NPN transistor used for amplifier and switch applications. The 2SC3835 is designed to provide high gain and low noise performance. The device is also designed to be used at frequencies up to 200MHz, depending on the application. The device can be used as an amplifier in applications such as audio, linear and switching. It also has a wide frequency response range, making it useful in radio frequency applications.
2SC3835 is manufactured using a planar process, which is a semiconductor manufacturing process used to produce high density semiconductor devices. This type of device has an inherently high frequency response. This makes it suitable for applications such as radio and television. The device can be used to amplify signals, as well as to switch between high and low voltage levels in electrical circuits.
The working principle of 2SC3835 is based on the NPN bipolar junction transistor (BJT). BJT transistors are three-terminal devices consisting of a collector, base, and emitter. A BJT works by creating a current flow between the collector and emitter when the base-emitter junction is forward-biased. When the base-emitter junction is reversed-biased, the transistor is said to be ‘off,’ and no current flows between the collector and emitter.
BJT transistors are normally used in amplifying circuits due to their high input impedance and low output impedance. This allows them to amplify small input signals and provide a large output signal. The 2SC3835 utilizes the same principle to achieve high gain and low noise performance, making it ideal for audio, linear and switching applications.
2SC3835 is used in a wide variety of applications due to its high frequency response, high gain, and low noise. It is used in amplifiers, radio and television receivers, synthesizers, audio signal processing, and switching circuits. 2SC3835 is also used as a power switch in many power supply circuits, due to its high current capacity and switching ability.
The high gain, low noise, and wide frequency response of the 2SC3835 make it a great choice for applications requiring a high degree of accuracy and reliability. It is an excellent choice for linear and switching applications, as well as for amplifying small signals. The 2SC3835 is an ideal choice for many applications due to its high frequency response and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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