| Allicdata Part #: | 2SC3979A-ND |
| Manufacturer Part#: |
2SC3979A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS NPN 800V 3A TO-220F |
| More Detail: | Bipolar (BJT) Transistor NPN 800V 3A 10MHz 2W Thro... |
| DataSheet: | 2SC3979A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 800V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 160mA, 800mA |
| Current - Collector Cutoff (Max): | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 800mA, 5V |
| Power - Max: | 2W |
| Frequency - Transition: | 10MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F-A1 |
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2SC3979A Application Field and Working Principle
2SC3979A, a junction transistor that belongs to the Bipolar (BJT) - Single family, is a silicon NPN planar epitaxial transistor integrated with two, three, and four lead isolation processes. It is perfect for applications that require a higher current capacity for low power consumption and lightweight solutions.
This transistor is suitable for application in the field of switching, amplifying, and detecting, with the protective gear of photo sensing. Thanks to its features, the 2SC3979A can be found in applications such as voltage regulators, TV, radio, game players, and telecom equipment. Its features and properties include high gain, low noise, low quiescent current, and high input impedance.
2SC3979A Working Principle
2SC3979A is a three-terminal bipolar transistor which can be used as an amplifier, switch or oscillator. It basically consists of three terminal: emitter, collector and base. The base and emitter junction is forward biased and collector and emitter junction is reversed biased. The base terminal is used as controlling terminal as current at base will control the current between emitter & collector terminals. The current flow between the emitter and collector is determined by the current gain of the transistor, which is denoted by hFE.
The 2SC3979A follows the fundamental principle of bipolar junction transistors, which states that the current at the base of the transistor will control the current from the collector to the emitter. The current at the base is controlled by the voltage between the base-emitter junction, which is adjusted by the applied forward bias voltage VBE.
In other words, the Collecto-Base voltage VCB has to be more negative than the base-emitter voltage VBE in order for the transistor to be switched ON. This is usually achieved by supplying a positive voltage to the base terminal. This positive voltage causes the base-emitter junction to be forward bias and thus allowing current to flow across the collector to the emitter.
Conclusion
2SC3979A is a versatile transistor which can be used in a wide range of applications. It is particularly suitable for use in low power consumption and light weight solutions. Thanks to its features including low noise, high gain, low quiescent current, and high input impedance, 2SC3979A is also perfect for applications such as voltage regulators, TV, radio, game players, and telecom equipment.
The specific data is subject to PDF, and the above content is for reference
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2SC3979A Datasheet/PDF