Allicdata Part #: | 2SD2129LS4ALPSQ(M-ND |
Manufacturer Part#: |
2SD2129,LS4ALPSQ(M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 3A 100V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 2W Through H... |
DataSheet: | 2SD2129,LS4ALPSQ(M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 12mA, 3A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 1.5A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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2SD2129 & LS4ALPSQ(M) Application Fields and Working Principles
The 2SD2129 & LS4ALPSQ(M) are two high-powered transistors which fall into the category of bipolar junction transistors (BJTs). The single design of these BJTs makes them suitable for a wide variety of applications, ranging from low to high power consumption. Due to their low power consumption and high power output, they are often used in high-speed automotive devices, amplifiers, and other applications requiring high speed switching.
The 2SD2129 & LS4ALPSQ(M) are capable of supplying up to 10 A, at a maximum voltage of 45 volts. They also have a low thermal resistance of 0.75℃/W. This makes them ideal for applications that require low power consumption, and high power output. The low thermal resistance also eliminates any additional heat generated during operation, thus allowing the transistor to maintain its efficiency and reliability for longer periods of time.
The 2SD2129 & LS4ALPSQ(M) also feature a high-frequency response. This allows for a maximum frequency of 1 to 16 MHz, and a maximum switching speed of 100 ns. This characteristic is especially useful for audio applications, where a high frequency response is required. Additionally, the high frequency response of these BJTs makes them ideal for GHz wireless communication applications.
The working principle of the 2SD2129 & LS4ALPSQ(M) is the same as any other BJT. The base of the transistor is responsible for receiving the input signal. When the signal is received, the base begins to conduct current between the collector and emitter, which then produces the output. This output can be either an on or off signal, depending on the type of BJT.
The 2SD2129 & LS4ALPSQ(M) are widely used in a variety of applications due to their low power consumption and high power output, as well as their high-frequency response. For example, they are used in car electronics, amplifiers, switch-mode power supplies, and in GHz wireless communication systems. Additionally, they are used in audio applications due to their high-frequency response. Thus, these transistors can provide a great deal of versatility in terms of their application field.
The specific data is subject to PDF, and the above content is for reference
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