2SD2227STPW

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	300nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	1200 @ 1mA, 5V
Power - Max:	300mW
Frequency - Transition:	250MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	SC-72 Formed Leads
Supplier Device Package:	SPT

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2SD2227STPW Application Field and Working Principle

The 2SD2227STPW is an advanced technology NPN silicon epitaxial planar transistor, designed for use in high frequency switching circuits. It is an exceptionally fast device with a low on-resistance, allowing for higher switching speeds with reduced power loss. This device is particularly well-suited for use in high quality inverters, audio amplifiers, power supplies, line drivers, and other power switching and control applications.

Transistors - Bipolar (BJT) - Single

A transistor is a semiconductor device composed of three terminals -- the emitter, base, and collector -- that control the flow of current between the emitter and collector. It is a current-controlled current source, meaning that its current gain is a function of the amount of current that flows through its base. Transistors are generally classified as bipolar junction transistors (BJT) (which have a base-emitter junction and a collector-base junction) and field-effect transistors (FETs) (which rely on the electric field generated by an electric charge to control the current flow).The 2SD2227STPW is a single-transistor BJT device. As such, it is composed of two p-type layers and one n-type layer. This creates two p-n junctions, one between the base and the emitter, and one between the collector and the base. When current passes through the base-emitter junction, it creates a field that attracts carriers in the collector, which generates a collector current flow.The collector current gain (beta) of the 2SD2227STPW is high, at a minimum of 250. This means that a small amount of base current can generate a large amount of collector current. The 2SD2227STPW is also rated for high frequency switching, with a maximum collector cutoff frequency of 500MHz and a maximum DC current gain of 60dB at 300MHz. Its low on-resistance also makes it suitable for power switching applications, as small amounts of power can be lost in the switching process.The 2SD2227STPW is a highly versatile device, with a wide range of applications in the fields of power control and switching, and audio amplifiers. Switching circuits, inverters, line drivers, and power supplies all benefit from the device\'s high collector current gain and low on-resistance, allowing for faster and more efficient operation. High-gain audio amplifying circuits are also benefited by the device\'s maximum DC current gain of 60dB at 300MHz, enabling the amplification of extremely low-level audio signals while still maintaining low distortion.In summary, the 2SD2227STPW is a high-performance NPN silicon transistor designed to provide high collector current and fast switching speeds for a wide range of applications. Its low on-resistance, efficient switching properties, and high frequency cut-off makes it a highly sought after transistor in the fields of power control and switching, as well as in the audio amplifying industry.

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