2SD2345JSL Allicdata Electronics

2SD2345JSL Discrete Semiconductor Products

Allicdata Part #:

2SD2345JSLTR-ND

Manufacturer Part#:

2SD2345JSL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 40V 0.05A SSMINI-3
More Detail: Bipolar (BJT) Transistor NPN 40V 50mA 120MHz 125mW...
DataSheet: 2SD2345JSL datasheet2SD2345JSL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 2mA, 10V
Power - Max: 125mW
Frequency - Transition: 120MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F1
Base Part Number: 2SD2345
Description

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Transistors - Bipolar (BJT) - Single

A 2SD2345JSL application field and working principle is one of the most popular bipolar junction transistors (BJT) used for a variety of applications. It is a type of field effect transistor (FET), which is the basic switching component used in a circuit. It is a three-terminal device with the three terminals being the collector, base, and the emitter. The collector is connected to the FET’s drain, while the base is connected to the FET’s gate. The emitter is connected to the terminal that is connected to the source.

The 2SD2345JSL is a single transistor that is used in a variety of analog and digital circuit designs. It is mostly used in discrete applications. The 2SD2345JSL has a maximum current gain of 40, which is lower than other BJTs, but that current gain can be further enhanced by altering the geometry of the transistor.

The 2SD2345JSL transistor is mainly used in most linear applications where high current gain is needed. It is also used in amplifier applications where large collector current can be obtained. It is used for switching applications such as relays and thermistors, and for sensing applications where a certain range of current is detected in order to respond to some form of input.

The most commonly used working principle of the 2SD2345JSL is the PNP junction. In this working principle, the 2SD2345JSL is made up of two PNP transistors stacked together. The two transistors are connected together in an inverted manner, where the emitter of one transistor is connected to the collector of the other transistor and vice-versa. When a current is applied to the base of the transistor, it is amplified by the two transistors, producing an amplified output at the collector.

The working principle of the 2SD2345JSL depends on a number of factors including the base-emitter voltage, the reverse bias across the junction, the collector current, and the transistor’s width. The base-emitter voltage is the voltage applied across the junction of the two transistors, and the reverse bias is the voltage applied in a reverse direction to the junction of the two transistors. The collector current is the amount of current that is flowing from the collector to the emitter, and the width of the transistor is the amount of current that can pass through it without any significant amount of resistance.

The 2SD2345JSL is a simple and reliable device that has been used in many applications. It is reliable and provides good performance, making it suitable for many analog and digital circuit designs. The most common application fields of the 2SD2345JSL include amplifiers, relays, thermistors, and sensing applications, and the circuit designs depend on the precise working principles of the 2SD2345JSL.

The specific data is subject to PDF, and the above content is for reference

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