2SD21360RA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1A, 4V
Power - Max:	1.5W
Frequency - Transition:	220MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	MT-3-A1
Base Part Number:	2SD2136

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2SD21360RA is a common electronic component that belongs to the transistors – bipolar (BJT) – single category. It is mainly used as an N-channel enhancement-mode field effect transistor. 2SD21360RA features a voltage rating of 60 Volts (V) and current rating of 2 Amperes (A), along with a maximum power dissipation rating of 4.6 Watts (W). The purpose of this device is to switch or amplify electrical signals in many types of application.2SD21360RA is often incorporated into a variety of mechanisms and devices including power switching circuits, transducer amplifiers, television receivers, car sound systems, computers and many types of equipment. Specifically, it is commonly used in power supply circuits, power line drivers, logic circuits and other applications that require high switching speed and high frequency. Its other performance characteristics include a high switching speed of up to 50 nanoseconds (ns), high breakdown voltage of up to 50 Volts, low input capacitance of up to 5 picofarads (pF), and a low leakage current of up to 25µA.This electronic component is also known for its ease of use. It is equipped with two lead pins; the collector and the emitter pins. The main pins are usually connected to the power supply and the load. The circuit can be powered with either current or voltage signals. To turn the transistor on, a current or voltage pulse is applied to the base pin. The performance of the device can be further optimized by changing the value of the resistor connected to the base pin.The working principle of 2SD21360RA is based on its internal structure, which consists of several doped layers of P and N semiconductor materials. When a voltage is applied to the gate of the transistor, the electric field created across the channel attracts electrons from the N-type material, creating a conducting path between the emitter and collector. This is how the transistor amplifies and switches electrical signals.In conclusion, 2SD21360RA is a commonly used transistor in a variety of applications. It features a well-defined performance, high switching speed, high breakdown voltage, low input capacitance and low leakage current. The working principle of the component is based on its internal structure, which uses doped layers of P and N semiconductor materials. With its versatility and robust performance, 2SD21360RA is often the ideal choice for low-end power switching and power line driver circuits.

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