2SD21850RL Discrete Semiconductor Products

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2SD21850RL is categorized as Transistors - Bipolar (BJT) - Single. It is a NPN epoxy package transistor which has an isolation rating of 5000Vrms, making it ideal for applications which require high reliability, such as industrial and automotive electronics. The 2SD21850RL’s including features, datasheet and application field can be found in this detailed article.

Features of 2SD21850RL

2SD21850RL is designed for general purpose amplifier applications and has various features which make it suitable for such applications. It has a high collector-emitter breakdown voltage of 200V and the collector current capabilities is up to 2A. It has a maximum operating temperature of 150°C, making it suitable for use in harsh environments, as well as its high isolation rating. Some other important features of the 2SD21850RL are:

• Low collector-emitter saturation voltage VCE(sat)-0.2V(max) @ IC =1A.
• High current gain hFE-50 min. @ IC = 0.1A.
• Low noise figure NF-10dB.
• Good packaging considerability with small SOT/DIP.

2SD21850RL Datasheet

The datasheet of 2SD21850RL includes the device characteristics, test conditions and detailed design information. The important electrical characteristics of the 2SD21850RL transistor is given in the datasheet.

• Collector-Emitter Saturation Voltage VCE(sat) = 0.2V (max) @ IC = 1 A.
• Current Gain hFE = 50 @ IC = 0.1 A.
• Noise Figure NF = 10 dB.
• Collector-Base Breakdown Voltage BVCBO = 200V.
• Collector-Emitter Breakdown Voltage BVCEO = 200V.
• Emitter-Base Voltage VEBO = 5V.
• Collector Breakdown Current ICBO = 5mA.
• Maximum Collector Current ICM = 2A.

2SD21850RL Application Field

2SD21850RL can be used in a wide range of applications, owing to its variety of features. It is typically used in switching device and power switching applications, such as light dimming, DC-DC converters, pulse generators and motor speed controls. It is also well-suited for industrial and automotive applications because of its high isolation rating and maximum operating temperature of 150°C.

2SD21850RL Working Principle

The 2SD21850RL utilizes a NPN transistor which is used to amplify or switch electronic signals. NPN transistors are normally \'off\' and an electronic signal must be used to switch them \'on\'. The 2SD21850RL is a NPN epoxy package transistor and it works by having electrons flowing from the base to the collector and near zero current flowing from the base to the emitter. The collector-emitter voltage drops and the current flow increases as voltage is applied to the base. This allows the 2SD21850RL to control a larger electrical load.

In operation, the base-emitter junction is forward biased, allowing electrons to pass from the base to the collector region. The collector is then connected to a load and as electrons flow from the base to the collector, they can also flow through the load, allowing current to be switched on or off. As the voltage applied to the base increases, the current flowing in the collector will increase accordingly, this is how the transistor amplifies the signal applied to the base.

The 2SD21850RL is an ideal choice for applications which require high reliability and durability, such as industrial and automotive electronics. It is also well-suited for switching device and power switching applications due to its wide range of features and its high isolation rating.

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