2SD2654TLV Discrete Semiconductor Products

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The 2SD2654TLV is a silicon NPN type transistor in a TO-126 package, designed for use in high power switching and linear amplifier applications. The 2SD2654TLV offers high gain, high current, and low collector-emitter saturation voltage, making it an ideal choice for these applications. In addition, the 2SD2654TLV is also used as a general-purpose switching, amplifying, and line-level NPN transistor.

The 2SD2654TLV is a single-transistor bipolar junction device (BJT), having three pins for connection. The collector connection is the central pin, with the emitter pin to the left and the base pin to the right. The connections are labeled C, E, and B, respectively. The 2SD2654TLV is available in either a metal or plastic TO-126 package, with a transistor dimensions of 8.2mmx4.9mmx4.4mm.

The 2SD2654TLV has two major characteristics, namely the collector-emitter saturation voltage (Vce(sat)) and the current gain (hFE). The Vce(sat) of the 2SD2654TLV is typically 15V and the hFE is usually in the range of 20-100, with maximum ratings of 150V and 500, respectively. The 2SD2654TLV has a maximum collector-base voltage of 150V, with a maximum power dissipation of 600mW.

The 2SD2654TLV is commonly used for high power switching and linear amplifier applications. It is particularly useful for applications requiring high gain and low collector-emitter saturation voltage. It can be used as an on-off switch in many types of power supplies, to control the current flow, or to activate and deactivate the power supply. It is also used as a line-level amplifier, as it amplifies a voltage level and transfers signals between different stages in a system. The 2SD2654TLV can also be used as a driver transistor, used to supply the base current that controls the switching of other transistors.

The working principle of the 2SD2654TLV is the same as that of any other bjt transistor. In its active state, the transistor behaves as an open-circuit between the collector and emitter terminals. A small base current is applied to the base terminal, which in turn, controls the much larger collector current. The amount of current flowing through the collector-emitter junction is determined by the collector-base voltage and the ratio of hFE. By adjusting the control current, the 2SD2654TLV can be used to amplify a signal or control the current flow.

The 2SD2654TLV is a widely used general-purpose transistor for high power switching and linear amplifier applications. Its low saturation voltage and high gain make it an ideal choice for these types of applications. It is also widely used as an on-off switch, a line-level amplifier, and a driver transistor. The working principle of the 2SD2654TLV is the same as any other bipolar junction transistor, with the collector current being determined by the collector-base voltage and the hFE ratio.

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