2SD262100L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors (BJTs) are widely used electronic components in circuits. 2SD262100L is a single packaged BJT and has been utilized in many applications. This article explains the 2SD262100L\'s application fields and its working principle.

2SD262100L Application Fields

2SD262100L is suitable for use in the applications that require high breakdown voltage capability. Therefore, they are commonly used in industrial, automotive and aerospace sectors. Generally, the 2SD262100L can be used in power switching circuits, operational amplifier circuits as well as Darlington amplifier circuits. In addition, this device can be implemented in audio amplification, general purpose power transistors, class B amplifier circuits and high voltage switch. This BJT also offers high gain current conduction, large collector current and low saturation voltage.

2SD262100L Working Principle

The 2SD262100L device is a bipolar junction transistor that consists of three terminals: emitter (E), base (B), and collector (C). The flow of the current within a BJT is determined by the structure of the device and the biasing voltage applied. The device works in two different operating modes, namely the cutoff mode and the active mode. In the cutoff mode, the transistor is operating in the off state as there is no current flowing between the collector and the emitter of the device. On the other hand, in the active mode, the transistor is in the on state. The collector current will be amplified in this mode due to the current gain of the device. The level of the current gain is determined by the type of the transistor and bias voltage applied at the base.

The operation of the 2SD262100L is governed by the base-emitter bias voltage. When a positive voltage is applied to the base of the device, a small current will flow through the base and emitter. The current will be amplified by the increasing resistance at the collector side due to the increase in voltage drop across the collector-emitter terminals. As a result, a larger current will flow through the collector-emitter region due to the increase in resistance. This is known as the forward active region of the device. When a negative voltage is applied to the base of the device, the current flow will be reversed and the transistor will be in the reverse active region.

The 2SD262100L offers wide common-emitter current gain range from 25 to 40. The maximum collector current of the device is up to 5A and the collector-emitter voltage is from 800V to 900V. Furthermore, the device can dissipate up to 30W of power at 25°C, without a heat sink.

Conclusion

The 2SD262100L is a single packaged BJT suitable for use in the applications that require high breakdown voltage capability. 2SD262100L is mostly applied in power switching circuits, operational amplifier circuits, Darlington amplifier circuits, audio amplification, class B amplifier circuits, and high voltage switch. Its operation is based on the biasing voltage applied at the base-emitter junction of the device. The 2SD262100L offers wide current gain range, high collector current and high collector-emitter voltage.

The specific data is subject to PDF, and the above content is for reference