Allicdata Part #: | 2SD2150T100RTR-ND |
Manufacturer Part#: |
2SD2150T100R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 20V 3A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 3A 290MHz 500mW S... |
DataSheet: | 2SD2150T100R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 2A |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 100mA, 2V |
Power - Max: | 500mW |
Frequency - Transition: | 290MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Base Part Number: | 2SD2150 |
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The 2SD2150T100R is a type of single bipolar junction transistor (BJT). It is of the PNP variety, as indicated by the “D” as the middle letter in the part number. This type of BJT offers a variety of advantages over other bipolar transistors. These advantages make this device an optimal choice for a wide range of applications.
The 2SD2150T100R stands out from other BJTs due to its low-noise, low-distortion characteristics and its ability to switch quickly between saturation and cutoff states. Furthermore, this device has a high slew rate and allows for operating voltages up to 100V. These features make it well suited for a variety of analog and digital applications, such as power amplifiers, switching circuits, and voltage regulators.
The 2SD2150T100R has three terminals, labeled E, B, and C, corresponding to the Base, Emitter, and Collector of the transistor. The Base terminal is responsible for controlling the current flowing between the Emitter and Collector terminals. When a current is applied to the Base terminal, it forward-biases the Base-Emitter junction, allowing current to flow from the Emitter to the Collector. As the current flowing through the Base terminal increases, it increases the current flow from the Emitter to the Collector, resulting in a proportional increase in the Collector current.
When a voltage is applied to the Collector terminal and the Base terminal is grounded, the Collector-Emitter junction is reverse-biased and the device is in cutoff. This means that no current is flowing from the Collector to the Emitter and the transistor is not conducting. If a current is applied to the Base terminal, it forward-biases the Base-Emitter junction and the current from the Collector to the Emitter increases, turning on the transistor.
The 2SD2150T100R device is capable of acquiring and maintaining oscillations that can be used by circuits to achieve feedback. While this device is not the only device capable of oscillation, one of its advantages over other BJTs is its high input impedance when biased in such a way as to produce oscillations. This high impedance allows the device to be employed in circuits that need to maintain oscillations for long periods of time.
The 2SD2150T100R has other applications as well, such as being used as an output driver in current-sense circuits. This device is also used as a switch in high-current circuits, and can be employed as an audio amplifier or an audio-visual amplifier. It can be used as a power amplifier in multimedia sound systems and can also be used to drive a motor or other large inductive load.
The 2SD2150T100R is a versatile device due to its low-noise and low-distortion characteristics and its ability to switch quickly between saturation and cutoff states. It is well suited to a variety of analog and digital applications and is capable of providing feedback as well as driving high current loads. This information makes the 2SD2150T100R an optimal choice for those looking for a reliable and versatile single bipolar junction transistor.
The specific data is subject to PDF, and the above content is for reference
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