2SD2703TL Discrete Semiconductor Products |
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Allicdata Part #: | 2SD2703TLTR-ND |
Manufacturer Part#: |
2SD2703TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 30V 1A TUMT3 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 1A 320MHz 800mW S... |
DataSheet: | 2SD2703TL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 25mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 100mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 320MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | TUMT3 |
Base Part Number: | 2SD2703 |
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The 2SD2703TL is a bipolar junction transistor (BJT) that belongs to the Single family. As such, it is used for a variety of purposes. This article will provide an in-depth look at its application field and working principle.
The 2SD2703TL is a two-layer PNP transistor that is typically used in low-power output stages and its collector current (I_c) can range from 0.1A to 0.3A. Its maximum voltage rating is 45V and its maximum power dissipation (P_d) is 400mW. For purposes of proper operation, it should be operated within a temperature range of -55C to +150C.
The 2SD2703TL is well-suited for applications such as audio amplifiers and battery-direct supply circuits. Its fast switching speed and low junction capacitance make it a good choice for circuits requiring high-frequency response. Additionally, its low-noise and excellent linearity provide for a clearer sound quality when being used in audio applications.
The 2SD2703TL also has numerous general-purpose uses. Its low-power capability makes it ideal for applications such as signal amplification, frequency conversion, and interface amplification. Additionally, its low cost and simple structure make it a good choice for circuits requiring small size, low power, and high reliability. Its ease of use and low-power capability also make it a good choice for various driver applications.
In terms of its working principle, the 2SD2703TL is a PNP type bipolar junction transistor. As such, it utilizes a combination of two layers of P-doped and N-doped semiconductor material to form a three-layer junction (collector, base, and emitter). Two PN junctions are formed on either side of the base and are responsible for the transistor\'s gain and current-carrying capabilities. The transistor is then powered by an external supply voltage (V_cc).
When the Base-Emitter junction is forward biased, a small amount of current flows from the base to the emitter. This current is amplified by the transistor, which in turn creates a larger collector current. This larger collector current is then passed through the external load connected to the collector.
In addition, the transistor has a gain (h_fe) which is responsible for amplifying the input current. This is done by allowing a change in the collector current (I_c) compared to the base current (I_b). This can be expressed as their ratio (I_c/I_b), which is the transistor\'s current gain.
Overall, the 2SD2703TL has a wide range of applications and is an ideal choice for various low-power output stages and general-purpose circuits. Its fast switching speed, low junction capacitance, low-noise and excellent linearity make it an excellent choice for audio and signal amplification applications. Additionally, its low power consumption, small size, and simple structure make it well-suited for various driver applications.
The specific data is subject to PDF, and the above content is for reference
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