2SD22420PA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	4V @ 20mA, 5A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	4000 @ 3A, 3V
Power - Max:	2W
Frequency - Transition:	20MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	MT-4-A1
Base Part Number:	2SD2242

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The 2SD22420PA is a small signal discrete NPN transistor made by Rohm. It belongs to the Single type Bipolar Junction Transistor (BJT) category. This NPN transistor has a maximum collector current of 0.1 A and a maximum Collector-Emitter voltage of 15 Volts, which makes it suitable for low-power applications. This small signal transistor is available in TO-92, to-225a and to-252 packages, thus providing a great deal of flexibility. Its breakdown voltage is also affordable, with a minimum of 6 Volts and a maximum of 8 Volts.

Application Fields of 2SD22420PA

Due to its relatively high breakdown voltage, the 2SD22420PA is mainly used for low-power signal switching and signal amplification applications. Additionally, it is also used for modulation, signal buffering, and power supply switching. As its collector current is extremely low, it is mostly used for medium and low-power audio and video amplifiers. This device can also be used for logic circuits and digital signal processing projects.

Working Principle of 2SD22420PA

The 2SD22420PA works on the basis of a Bipolar Junction transistor (BJT). A BJT is a three terminal semiconductor device composed of a base, a collector, and an emitter. The BJT is constructed of a P-type material and an N-type material connected in a single block. The P-type material is sandwiched between two N-type regions and works as the base of the transistor.To start the operation, a low voltage is applied at the base terminal. Due to the low voltage the current starts flowing through the base-emitter junction, creating a space charge region around the P-type material. Eventually, a large current is allowed to flow from the collector to the emitter. The collector current can be controlled by adjusting the applied voltage at the base.

Conclusions

To summarize, the 2SD22420PA is an NPN single BJT transistor which is used for low-power signal switching, amplification and modulation. It works on the basis of a Bipolar Junction Transistor and can provide a maximum collector current of 0.1 A and a maximum Collector-Emitter voltage of 15 Volts. This small signal transistor is available in TO-92, to-225a and to-252 packages and its breakdown voltage lies between 6 Volts and 8 Volts.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description