2SD2623G0L Allicdata Electronics
Allicdata Part #:

2SD2623G0LTR-ND

Manufacturer Part#:

2SD2623G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 20V 0.5A SMINI-3
More Detail: Bipolar (BJT) Transistor NPN 20V 500mA 200MHz 150m...
DataSheet: 2SD2623G0L datasheet2SD2623G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 150mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Base Part Number: 2SD2623
Description

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The 2SD2623G0L is a high-speed switching transistor that is widely used in a broad range of applications, including computer circuit boards, power systems, and industrial equipment. The 2SD2623G0L belongs to the BJT (Bipolar Junction Transistor) family of transistors and is a single-transistor device. It is also known as a power MOSFET.

The 2SD2623G0L is designed for applications with high-voltage and power switching requirements. It is capable of withstanding high current and high temperature operating conditions. The 2SD2623G0L has an extended junction temperature range from -55°C to +150°C. It also has a fast switching speed, low on-resistance, and low gate-source leakage current.

The 2SD2623G0L is manufactured by a process of vertical diffused metal oxide semiconductor (VDMOS) technology. This process combines the advantages of metal-oxide-semiconductor (MOS) and metal-insulator-semiconductor (MIS) process technologies. VDMOS technology is used to fabricate high voltage and high power switching transistors.

The 2SD2623G0L\'s working principle is straightforward. It is a three terminal device consisting of a source, a drain, and a gate. The source and drain are both connected to a power supply, while the gate is connected to an input signal. When the gate voltage is at a certain level, current will flow from the source to the drain. The amount of current that can be switched is determined by the size of the channel formed between the source and drain.

The 2SD2623G0L transistor is used in a wide range of applications including automotive circuits, industrial control systems, power supplies, and DC-DC converters. It is extensively used to provide fast switching for high current and high voltage applications. The 2SD2623G0L is becoming increasingly popular for power switching applications due to its high-speed switching capability and its ability to withstand high temperature and current conditions.

In summary, the 2SD2623G0L is a high-speed switching transistor that falls into the BJT (Bipolar Junction Transistor) family of transistors. It is a single-transistor device that is manufactured by a VDMOS process and is extensively used in a wide range of applications. The 2SD2623G0L\'s working principle is straightforward - current flows from the source to the drain when the gate voltage is at the right level. The transistor is capable of withstanding high temperature and current conditions and is becoming increasingly popular for power switching applications.

The specific data is subject to PDF, and the above content is for reference

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