2SD2695(T6CANO,F,M Allicdata Electronics
Allicdata Part #:

2SD2695(T6CANOFM-ND

Manufacturer Part#:

2SD2695(T6CANO,F,M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 2A 60V TO226-3
More Detail: Bipolar (BJT) Transistor NPN 60V 2A 100MHz 900mW T...
DataSheet: 2SD2695(T6CANO,F,M datasheet2SD2695(T6CANO,F,M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SD2695(T6CANO,F,M is a type of single bipolar junction transistor (BJT).

Application Field

The 2SD2695(T6CANO,F,M is capable of dissipating power at 8 watts and consists of three terminals—the collector, emitter, and base. It is mainly used in the general purpose switching array and in high-speed switching circuits. It is also suitable as a pre-driver in a relay driver circuit, display power switch circuits, inverter systems, audio output circuits, and in voltage and electric current limiter applications. The 2SD2695(T6CANO,F,M can also be used in DC-DC converters, voltage regulators, and many other applications.

Working Principle

The 2SD2695(T6CANO,F,M employs the principle of bipolar junction transistor (BJT) technology in which the current from the collector to the emitter is amplified by the voltage applied between the base and the emitter. This is the most fundamental working principle of BJT technology. It works by allowing current to flow in one direction, while blocking current in the opposite direction. It is also known as a current amplifier. The current, which flows from the collector to the emitter, is controlled by the voltage applied between the base and the emitter. This voltage is referred to as the base current.When the base current is increased, the collector-emitter current is also increased proportionately. In other words, the amount of current that flows from the collector to the emitter is proportional to the base current.

Conclusion

The 2SD2695(T6CANO,F,Mhas a wide array of applications and can be used for various purposes. It is commonly used for general purpose switching array, high-speed switching circuits, voltage and electric current limiter applications, pre-driver in a relay driver circuit, as well as in display power switch circuits, DC-DC converters, and audio output circuits. It majorly employs the principle of bipolar junction transistor (BJT) technology, where current from the collector to the emitter is controlled by the voltage applied between the base and emitter. The larger the base current, the more is the current that flows from the collector to the emitter thus amplifying the current.

The specific data is subject to PDF, and the above content is for reference

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