5LP01C-TB-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 5LP01C-TB-E is an N-channel enhancement mode power field effect transistor (FET). This device is manufactured using advanced copper technology, which is suitable for high power conversion applications. FETs are a special type of transistor that are used as electrical switches, amplifiers or regulators depending on the design and application. The 5LP01C-TB-E is designed to be a low on-resistance power FET that can be used in power-conversion and motor drive applications. These applications involve switching large currents, sometimes hundreds of amps, over short periods of time. The on-resistance of the FET is the resistance from the drain to the source when the FET is turned on. This FET has a maximum on-resistance of 0.6Ω.

A FET is a three-terminal device: source, gate, and drain. The source and drain are the two terminals that are connected to the source and drain of the circuit, and the gate is the terminal that is connected to a voltage potential. When a voltage is applied to the gate terminal, it will cause a current to flow between the source and drain terminals known as the drain-source current. In order for current to flow through the FET, the voltage applied to the gate must exceed the threshold voltage of the FET. This is also known as the turn-on voltage. The voltage required to turn-on the FET is approximately 2.0V and the maximum voltage rating is 30V.

The 5LP01C-TB-E can be used in a variety of power conversion applications including DC-DC converters, motor drivers, and power supplies. The large on-resistance allows the FET to easily switch large amounts of current. The gate is isolated from the source and drain so the FET can be driven directly with a DC voltage source. It can also be driven with an AC voltage source; however, in this case, a transformer or optocoupler will be required. Another important feature of this FET is that its on-resistance is relatively low and linear over a wide range of current, which makes it ideal for power conversion applications.

The 5LP01C-TB-E is an example of a power FET that can be used in power conversion and motor driver applications. Its low on-resistance and linear current handling characteristics make it well suited for these applications. Its isolation between the gate and source and drain terminals allow it to be easily driven with a DC or AC voltage source, while its wide operating voltage range make it suitable for a variety of applications. This FET is an ideal choice for designers looking for a reliable, low-cost solution for their power conversion needs.

The specific data is subject to PDF, and the above content is for reference