Allicdata Part #: | 5LP01SS-TL-E-ND |
Manufacturer Part#: |
5LP01SS-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 70MA SSFP |
More Detail: | P-Channel 50V 70mA (Ta) 150mW (Ta) Surface Mount 3... |
DataSheet: | 5LP01SS-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 23 Ohm @ 40mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.4pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-SSFP |
Package / Case: | SC-81 |
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The 5LP01SS-TL-E is a single-end N-channel enhancement mode series MOSFET (metal-oxide-semiconductor field-effect transistor), which is designed for applications such as high-frequency switching, DC-DC converters and load switch circuits. This device is ideally suited for portable and home appliance applications.
Application Field
As a specific type of transistor, the 5LP01SS-TL-E MOSFET is used in many different electronics applications. It is considered a versatile transistor that can be used for low and high frequency switch circuits, low power amplifiers, power switching, circuit protection and a range of other automotive, industrial and consumer applications. Furthermore, this MOSFET is typically used in various power conversion applications, such as DC-DC converters, on/off motor control circuits, motor speed control and load switch circuits due to its low resistance and low power dissipation capabilities.
Working Principle
The 5LP01SS-TL-E works by using the field effect, meaning that when a voltage source is applied to the gate of the MOSFET, a field is created which attracts or repels electrons and controls the flow of current through the transistor. This is known as enhanced-mode switching, where the gate field controls the flow of electrons in the transistor. When the gate receives a positive voltage, the channel is opened allowing electrons to flow from the drain to the source, resulting in a closed-circuit in the form of a low resistance. When the gate voltage is removed, the channel closes, thus preventing the flow of electrons.
The 5LP01SS-TL–E MOSFET is designed to operate in both an on-state and off-state; this makes it an ideal MOSFET for use in applications that require switching and signal processing. In addition to this, this MOSFET can also be used in applications that require low-frequency switching, such as motor control and signal switching. Furthermore, it is considered a low power MOSFET due to its low threshold voltage, low on-state resistance and low capacitance.
Not only is the 5LP01SS-TL–E MOSFET a reliable device, but it is also a cost-efficient solution. It is manufactured using advanced silicon technology and is extremely reliable, even when exposed to a wide temperature range.
Conclusion
The 5LP01SS-TL-E MOSFET is a single-end N-channel enhancement mode series that is designed for applications such as high-frequency switching and DC-DC converters. It is also used in various power conversion applications, ranging from on/off motor control circuits and motor speed control to circuit protection and other consumer applications. The working principle of the 5LP01SS-TL-E MOSFET is based on the field effect, where the gate field controls the flow of electrons in the transistor.
The 5LP01SS-TL-E MOSFET is a reliable device, offering both cost-efficiency and high performance. Furthermore, it is ideal for low and high frequency switch circuits, low power amplifiers and a range of other automotive, industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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