Allicdata Part #: | 5LP01C-TB-H-ND |
Manufacturer Part#: |
5LP01C-TB-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 50V 70MA CP |
More Detail: | P-Channel 50V 70mA (Ta) 250mW (Ta) Surface Mount 3... |
DataSheet: | 5LP01C-TB-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 70mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 23 Ohm @ 40mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.4pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-CP |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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FETs (Field Effect Transistors) generally refers to a two-terminal unipolar device, whose gate terminal can control the current from the source to the drain. The FETs include MOSFETs (Metal-Oxide Semiconductor FETs) and JFETs (Junction FETs). MOSFETs can also be divided into two types: Single and Dual.
5LP01C-TB-H is a single-gate power MOSFET developed by Toshiba. It consists of a silicon substrate and an insulated source/drain region encapsulated in a TO-251 package, with a drain-gate voltage (VGD) range of -25~+250V and a drain current (ID) range of -1.8A~+6A. The device includes an integrated drive circuit which simplifies the design, reducing the number of external components needed for power control.
Application Field: The 5LP01C-TB-H can be used for various applications, such as motor control, data printer head pumping, lighting control, and the like. The integrated drive circuit feature makes it possible to control multiple power devices in a variety of systems. In addition, its low drift feature ensures small variations in the output voltage over time, ideal for applications that require high reliability such as power supplies, motion control systems, and other industrial equipment.
Working Principle: The 5LP01C-TB-H works by using the electrostatic charge to control the current flow. It does this by creating an electric field between the gate and the substrate, then applying a voltage to the gate. This charge creates an electrical field in the substrate, allowing current to flow between the source and the drain. By controlling the amount of charge on the gate with voltage from the external circuit, the current through the device can be controlled.
The 5LP01C-TB-H has a low on-state resistance, making it capable of faster switching times than traditional MOSFETs. It also has a source-drain diode which can be used as protection in applications where high currents may be present. Additionally, its integrated driver circuit allows for easy implementation and operation of the device.
In conclusion, the 5LP01C-TB-H is a versatile and reliable single-gate power MOSFET designed for various applications such as motor control, data printer head pumping and lighting control. It has a low drift and a low on-state resistance for faster switching times. The integrated drive circuit simplifies design and reduces the number of external components needed for power control, making it ideal for applications that require high reliability.
The specific data is subject to PDF, and the above content is for reference
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