5LP01M-TL-E Allicdata Electronics
Allicdata Part #:

5LP01M-TL-E-ND

Manufacturer Part#:

5LP01M-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 50V .07A
More Detail: P-Channel 50V 70mA (Ta) 150mW (Ta) Surface Mount 3...
DataSheet: 5LP01M-TL-E datasheet5LP01M-TL-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V
FET Feature: --
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-MCP
Package / Case: SC-70, SOT-323
Description

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5LP01M-TL-E is a type of transistor, namely a Field Effect Transistor (FET). The basic kind of FET is a single MOSFET. FETs, like other kinds of transistors, are used to control high current or high voltage signals. The 5LP01M-TL-E is particularly suited to applications where high current switching is required.

The basic principle behind FETs is that they use an electric field to control the flow of current. The 5LP01M-TL-E is a specific type of FET known as a Metal Oxide Semiconductor (MOSFET). This type of device has two terminals that are connected to two metal oxide layers. One of these layers acts as a gate, controlling the flow of electrons through the device. The other acts as a drain and source, allowing current to flow through it in one direction.

The gate of the 5LP01M-TL-E is controlled by a voltage applied to it. When a positive voltage is applied to the gate, it causes the layer of metal oxide to become more conductive, allowing current to flow through it. This increases the voltage on the other side of the device, which is known as the drain side. When a negative voltage is applied to the gate, the layer of metal oxide becomes less conductive, and current is blocked from flowing through the FET. This is what makes FETs such useful components in circuit design, as they can switch high currents on and off with very little power.

The 5LP01M-TL-E is a low power, high current switching FET. It has a low gate threshold voltage, allowing it to be switched at very low gate voltages. It also has a high drain current, allowing it to handle large currents. This makes it ideal for use in high-power applications, such as motor control, home automation, and industrial control systems. It is commonly used in switch mode power supplies, where it is used to switch high current and high voltage signals.

In addition to its high current and voltage switching capabilities, the 5LP01M-TL-E also has low on-state resistance, making it ideal for use in power switching applications. It also has a low gate charge, making it more efficient and cost effective than other types of FETs. This makes it well-suited for use in applications such as power management and motor control.

Overall, the 5LP01M-TL-E is an excellent choice for applications where high current and voltage switching are required. Its low gate threshold voltage and high drain current make it ideal for switch mode power supplies, home automation, and industrial control systems. Additionally, its low on-state resistance and low gate charge make it efficient and cost-effective, making it a great choice for power management and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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