60EPF04 Allicdata Electronics
Allicdata Part #:

60EPF04-ND

Manufacturer Part#:

60EPF04

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 60A TO247AC
More Detail: Diode Standard 400V 60A Through Hole TO-247AC Modi...
DataSheet: 60EPF04 datasheet60EPF04 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Description

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The 60EPF04 is a diode-rectifier device from Vishay Semiconductor\'s 60E family of single-phase rectifiers. It features a maximum forward current of 4A, a maximum reverse voltage of 60V, and a forward voltage drop of 0.88V. Its forward recovery time is less than 20ns and its reverse recovery time is less than 60ns.The 60EPF04 provides an effective and efficient current-flow solution for various applications and is widely used in many different types of circuits.

The 60EPF04 is an ideal choice for circuits that require a high-efficiency, cost-effective rectification device. It is designed with a low forward voltage and a low reverse-recovery time, making it suitable for use in regulated power supplies, free-wheeling diodes, and general rectification applications. Additionally, the 60EPF04 offers a low-frequency performance and can be used for applications with frequencies up to 1KHz. For higher frequencies, the device is suitable for switching applications and pulse-width-modulated systems.

60EPF04’s high surge current capability makes it suitable for peak-power applications, such as motor drives and UPS systems. Furthermore, its low jitter characteristics make it suitable for precision analog to digital and digital to analog systems. The wide operating temperature range of the 60EPF04 allows it to be used in high-temperature applications as well.

The 60EPF04 uses a silicon P-type substrate and a junction-gate structure that is connected to the PN junction and acts as a voltage regulator. This junction-gate structure has a controlled breakdown voltage which limits the voltage across the device. The device’s junction temperature remains relatively low which increases its stability and performance in high-temperature applications. The PN junction also helps to prevent externally generated noise from degrading the device performance.The device’s junction-gate structure is constructed of two heavily doped regions, an anode and a cathode. The anode is connected to the source voltage,while the cathode is connected to the ground. The device’s output current flows from the anode to the cathode when the anode voltage exceeds the breakdown voltage of the device’s junction-gate. The sum of the source voltage and the breakdown voltage will determine the output current flow. The PN junction in the device helps to reduce the reverse current conduction. Additionally, the junction gate structure in the device controls the output current and ensures an efficient current-flow.

The 60EPF04 provides a reliable and efficient diode-rectifier solution in a wide range of applications. Its high forward current, low forward voltage drop, low reverse-recovery time, and relatively low-temperature operation make it suitable for many types of circuits. It is an ideal choice for regulated power supplies, free-wheeling diodes, peak-power applications, analog to digital and digital to analog systems, and more.

The specific data is subject to PDF, and the above content is for reference

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