Allicdata Part #: | 60EPF10-ND |
Manufacturer Part#: |
60EPF10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 60A TO247AC |
More Detail: | Diode Standard 1000V 60A Through Hole TO-247AC Mod... |
DataSheet: | 60EPF10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 480ns |
Current - Reverse Leakage @ Vr: | 100µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The 60EPF10 is an innovative single rectifier diode for fast switching electronic applications. In comparison to conventional rectifier diodes, these high-speed switching devices offer superior performance and faster switching times. The device is well-suited for applications in the electrical and telecommunications industries and offers excellent switching times and low power dissipation. The 60EPF10 has a sophisticated construction that allows a fast current conduction and operates at voltages up to 800 volts.
The single rectifier diode is basically used to rectify alternating current (AC), producing a unidirectional current. This is done by allowing only one direction of current flow. The diode works in its forward bias mode and it conducts current when forward biased and blocks the current flow when reversed biased. In the forward biased mode, the diode acts as a closed switch, allowing current to flow. When the reverse bias is applied, the diode acts as an open switch, blocking current from flowing.
The 60EPF10 is designed with a low forward voltage drop and a fast current conduction. The fast switching times and low reverse saturation capabilities are what makes this diode so well-suited for the electrical and telecommunications industries. The device includes a veritable avalanche process that helps reduce power dissipation. The Schottky diode utilizes Schottky contacts to reduce the forward voltage drop and increase power dissipation.
The construction of the device consists of a junction between copper and silicon. The silicon is an N-type semiconductor and the copper is a metal contact. The copper contacts the N-type junction, creating a Schottky barrier. The Schottky barrier reduces the forward voltage drop and also allows for faster switching times, due to the lower switch-off voltage.
The 60EPF10 is an effective device for fast rectification of AC power and for fast switching applications. It operates with a maximum forward current of 1A and a maximum repetive peak current of 10A. It is designed to operate at voltages up to 800V and is well suited for use in the telecommunications and power applications. The device features fast switching times and low power dissipation, making it ideal for use in high speed switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-60EPS08PBF | Vishay Semic... | -- | 857 | DIODE GEN PURP 800V 60A T... |
VS-60EPU06PBF | Vishay Semic... | -- | 500 | DIODE GEN PURP 600V 60A T... |
VS-60EPS12-M3 | Vishay Semic... | 7.67 $ | 65 | DIODE 1.2KV 60A TO247ACDi... |
VS-60EPF02-M3 | Vishay Semic... | 9.67 $ | 2 | DIODE GEN PURP 200V 60A T... |
VS-60EPF06PBF | Vishay Semic... | 5.9 $ | 124 | DIODE GEN PURP 600V 60A T... |
VS-60EPS08-M3 | Vishay Semic... | 7.62 $ | 127 | DIODE GEN PURP 800V 60A T... |
VS-60EPF12-M3 | Vishay Semic... | 9.64 $ | 200 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF04-M3 | Vishay Semic... | 9.67 $ | 150 | DIODE GEN PURP 400V 60A T... |
VS-60EPS16-M3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.6KV 60A ... |
VS-60EPS12PBF | Vishay Semic... | 4.18 $ | 1228 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF12PBF | Vishay Semic... | 5.06 $ | 1277 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF10-M3 | Vishay Semic... | 10.0 $ | 20 | DIODE GEN PURP 1KV 60A TO... |
VS-60EPU02PBF | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPU04PBF | Vishay Semic... | 3.14 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPU06-N3 | Vishay Semic... | 1.23 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU06P-S1 | Vishay Semic... | 1.3 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU04HN3 | Vishay Semic... | 1.57 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPS16PBF | Vishay Semic... | 3.08 $ | 1000 | DIODE GEN PURP 1.6KV 60A ... |
VS-60EPU02-N3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPU04-N3 | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPU06HN3 | Vishay Semic... | 3.58 $ | 988 | DIODE GEN PURP 600V 60A T... |
VS-60EPF04PBF | Vishay Semic... | 3.7 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPF02PBF | Vishay Semic... | 4.22 $ | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPF10PBF | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 60A TO... |
VS-60EPF06-M3 | Vishay Semic... | 8.05 $ | 1000 | DIODE GEN PURP 600V 60A T... |
60EPS08 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 60A T... |
60EPS12 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.2KV 60A ... |
60EPF02 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 60A T... |
60EPF04 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 60A T... |
60EPF06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 60A T... |
60EPF10 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 60A TO... |
60EPF12 | Vishay Semic... | 4.85 $ | 1000 | DIODE GEN PURP 1.2KV 60A ... |
60EPU02 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 60A T... |
60EPU04 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 60A T... |
60EPU06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 60A T... |
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