Allicdata Part #: | 60EPS12-ND |
Manufacturer Part#: |
60EPS12 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.2KV 60A TO247AC |
More Detail: | Diode Standard 1200V 60A Through Hole TO-247AC Mod... |
DataSheet: | 60EPS12 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 60A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 1200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
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Introduction
A 60EPS12 is a modern semiconductor rectifier device that falls into a class of diode known as an epoxy passivated superfast rectifier. It uses an internal E-type structure composed of n-type and p-type regions to create a physical barrier to protect against atmospheric contaminants. It operates within a voltage range of 4.0 - 600 volts as a single component and is rated as such.
Application Fields
60EPS12s can typically be found in applications involving full-wave and half-wave rectification like power supplies, charger circuits, and motor drives. They can also be found in high load applications, such as power cords, HVAC systems, and electrical subsystems. This product is often used as a fast and efficient rectifying component in devices, resulting in higher levels of performance.
Working Principle
The operation of a 60EPS12 is dependent on the reverse-biased applied voltage. When the applied reverse voltage exceeds the rectifying diode’s rated reverse voltage, current flows from the anode (positive terminal) to the cathode (negative terminal). This occurs due to the lack of a physical barrier or depletion region that blocks the flow of current. Since the depletion region of the diode is no longer present, current can freely flow through the device. Additionally, the 60EPS12 is highly resistant to surge voltages and temperature cycling, which gives it increased efficiency over many other semiconductor diode rectifiers.
Conclusion
The 60EPS12 is an E-type p-n junction semiconductor rectifier. It is used in various devices and applications due to its fast switching and rectifying capabilities. It can be used in commercial and residential applications, motor drives, power supplies, and charger circuits, among other things. The diode rectifier provides high levels of efficiency and performance and has excellent surge capabilities, making it a cost-effective innovation when used in various power regulating processes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VS-60EPF06PBF | Vishay Semic... | 5.9 $ | 124 | DIODE GEN PURP 600V 60A T... |
VS-60EPS08-M3 | Vishay Semic... | 7.62 $ | 127 | DIODE GEN PURP 800V 60A T... |
VS-60EPF12-M3 | Vishay Semic... | 9.64 $ | 200 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF04-M3 | Vishay Semic... | 9.67 $ | 150 | DIODE GEN PURP 400V 60A T... |
VS-60EPS08PBF | Vishay Semic... | -- | 857 | DIODE GEN PURP 800V 60A T... |
VS-60EPS12PBF | Vishay Semic... | 4.18 $ | 1228 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF12PBF | Vishay Semic... | 5.06 $ | 1277 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPU06PBF | Vishay Semic... | -- | 500 | DIODE GEN PURP 600V 60A T... |
VS-60EPS12-M3 | Vishay Semic... | 7.67 $ | 65 | DIODE 1.2KV 60A TO247ACDi... |
VS-60EPF02-M3 | Vishay Semic... | 9.67 $ | 2 | DIODE GEN PURP 200V 60A T... |
VS-60EPU06-N3 | Vishay Semic... | 1.23 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU06P-S1 | Vishay Semic... | 1.3 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU04HN3 | Vishay Semic... | 1.57 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPS16PBF | Vishay Semic... | 3.08 $ | 1000 | DIODE GEN PURP 1.6KV 60A ... |
VS-60EPU02-N3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPU04-N3 | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPU06HN3 | Vishay Semic... | 3.58 $ | 988 | DIODE GEN PURP 600V 60A T... |
VS-60EPF04PBF | Vishay Semic... | 3.7 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPF02PBF | Vishay Semic... | 4.22 $ | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPF10PBF | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 60A TO... |
VS-60EPF06-M3 | Vishay Semic... | 8.05 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU02PBF | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPU04PBF | Vishay Semic... | 3.14 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPF10-M3 | Vishay Semic... | 10.0 $ | 20 | DIODE GEN PURP 1KV 60A TO... |
60EPS08 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 60A T... |
60EPS12 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.2KV 60A ... |
60EPF02 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 60A T... |
60EPF04 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 60A T... |
60EPF06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 60A T... |
60EPF10 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 60A TO... |
60EPF12 | Vishay Semic... | 4.85 $ | 1000 | DIODE GEN PURP 1.2KV 60A ... |
60EPU02 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 60A T... |
60EPU04 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 60A T... |
60EPU06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPS16-M3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.6KV 60A ... |
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