Allicdata Part #: | 60EPS08-ND |
Manufacturer Part#: |
60EPS08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 60A TO247AC |
More Detail: | Diode Standard 800V 60A Through Hole TO-247AC Modi... |
DataSheet: | 60EPS08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 60A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 100µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC Modified |
Operating Temperature - Junction: | -40°C ~ 150°C |
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60EPS08 application field and working principle
60EPS08 is a single diode rectifier, which is an ideal for ultrafast recovery rectifier diodes for high frequency switched mode power supplies (SMPS). It is based on a MOS gate controlled avalanche junction technology. This device has a wide range of applications such as high frequency power converters and electronic ballasts, as well as a competitive choice to replace low frequency rectifier diodes.
The peak forward surge current of the 60EPS08 is 170A, and its peak reverse voltage is 800 volts. It features extremely low energy loss and low leakage current, lower temperature rises and higher efficiency ratio than other standard silicon rectifier diodes. It has an extremely fast recovery time of 35ns, enabling it to be used in a high frequency switching mode power supply with a minimum of power dissipation.
The working principle of 60EPS08 starts with the gate voltage to control the diode turn on and off. When the gate voltage reaches a certain level, the diode turns on, allowing current to flow from anode to cathode. When the gate voltage reaches a lower level, the diode is turned off, preventing further current flow. This process is repeated during normal operation, allowing current to be switched on and off very quickly, making the rectifier very efficient in power conversion.
Apart from the high frequency SMPS, the 60EPS08 can also be used in a variety of other applications. It can be used to improve efficiency in a large range of electronics products, including solar energy systems, automotive and industrial power converters, and laptop computers. At the same time, it is an ideal choice for forward or inverted mounted rectifying applications, such as lighting ballasts or power supplies used in LED displays.
To sum up, the 60EPS08 is an ideal single diode rectifier for ultrafast recovery applications and high frequency SMPS. It has low energy loss and low leakage current, lower temperature rises and higher efficiency ratio than other standard silicon rectifier diodes. It can be used in a variety of different applications, ranging from high frequency SMPS to solar energy systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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VS-60EPS08PBF | Vishay Semic... | -- | 857 | DIODE GEN PURP 800V 60A T... |
VS-60EPU06PBF | Vishay Semic... | -- | 500 | DIODE GEN PURP 600V 60A T... |
VS-60EPS12-M3 | Vishay Semic... | 7.67 $ | 65 | DIODE 1.2KV 60A TO247ACDi... |
VS-60EPF02-M3 | Vishay Semic... | 9.67 $ | 2 | DIODE GEN PURP 200V 60A T... |
VS-60EPF06PBF | Vishay Semic... | 5.9 $ | 124 | DIODE GEN PURP 600V 60A T... |
VS-60EPS08-M3 | Vishay Semic... | 7.62 $ | 127 | DIODE GEN PURP 800V 60A T... |
VS-60EPF12-M3 | Vishay Semic... | 9.64 $ | 200 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF04-M3 | Vishay Semic... | 9.67 $ | 150 | DIODE GEN PURP 400V 60A T... |
VS-60EPS16-M3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.6KV 60A ... |
VS-60EPS12PBF | Vishay Semic... | 4.18 $ | 1228 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF12PBF | Vishay Semic... | 5.06 $ | 1277 | DIODE GEN PURP 1.2KV 60A ... |
VS-60EPF10-M3 | Vishay Semic... | 10.0 $ | 20 | DIODE GEN PURP 1KV 60A TO... |
VS-60EPU02PBF | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPU04PBF | Vishay Semic... | 3.14 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPU06-N3 | Vishay Semic... | 1.23 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU06P-S1 | Vishay Semic... | 1.3 $ | 1000 | DIODE GEN PURP 600V 60A T... |
VS-60EPU04HN3 | Vishay Semic... | 1.57 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPS16PBF | Vishay Semic... | 3.08 $ | 1000 | DIODE GEN PURP 1.6KV 60A ... |
VS-60EPU02-N3 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPU04-N3 | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPU06HN3 | Vishay Semic... | 3.58 $ | 988 | DIODE GEN PURP 600V 60A T... |
VS-60EPF04PBF | Vishay Semic... | 3.7 $ | 1000 | DIODE GEN PURP 400V 60A T... |
VS-60EPF02PBF | Vishay Semic... | 4.22 $ | 1000 | DIODE GEN PURP 200V 60A T... |
VS-60EPF10PBF | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 60A TO... |
VS-60EPF06-M3 | Vishay Semic... | 8.05 $ | 1000 | DIODE GEN PURP 600V 60A T... |
60EPS08 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 60A T... |
60EPS12 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1.2KV 60A ... |
60EPF02 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 60A T... |
60EPF04 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 60A T... |
60EPF06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 60A T... |
60EPF10 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 60A TO... |
60EPF12 | Vishay Semic... | 4.85 $ | 1000 | DIODE GEN PURP 1.2KV 60A ... |
60EPU02 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 60A T... |
60EPU04 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 60A T... |
60EPU06 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 60A T... |
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