70T651S10DR Allicdata Electronics
Allicdata Part #:

70T651S10DR-ND

Manufacturer Part#:

70T651S10DR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 208PQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 9Mb (256K...
DataSheet: 70T651S10DR datasheet70T651S10DR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 9Mb (256K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)
Base Part Number: IDT70T651
Description

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The 70T651S10DR is a form of memory commonly used in electronic devices and system designs. It’s a type of static random access memory (SRAM) which can store a large amount of information. SRAM is often used to store data which needs to be quickly accessed, as it has quicker access times than other types of memory. This makes SRAM an ideal choice for applications which require fast performance, as well as those which require large amounts of memory.

The 70T651S10DR consists of two major components, the capacitive array and the sensing circuit. The capacitive array contains a square array of capacitors, and it is this array which stores the information. The sensing circuit is responsible for controlling the movement of electrons through the array. This allows the memory to read the stored data and write it when there is a request from the processor.

When data is stored, a small amount of electric current passes across the capacitive array, which creates a charge. When this charge is read by the sensing circuit, it signals to the processor that the request has been received. The process of storing and reading data is called the read-write operation. This operation can be performed quickly, allowing data to be stored and read in a matter of nanoseconds.

The 70T651S10DR is commonly used in devices such as cell phones, digital cameras, and gaming consoles. Due to its increased memory capacity and faster read-write operations, it can provide users with quick access to large amounts of data. In addition, its low power consumption makes it ideal for use in battery-powered applications.

In summary, the 70T651S10DR is a type of static random access memory. It consists of a capacitive array, where data is stored, and a sensing circuit, which controls the movement of electrons across the array. This allows the memory to quickly store and retrieve data, making it an ideal choice for applications requiring fast performance and large amounts of memory. The 70T651S10DR is commonly used in devices such as cell phones, digital cameras, and gaming consoles.

The specific data is subject to PDF, and the above content is for reference

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