70T651S10BC8 Allicdata Electronics
Allicdata Part #:

70T651S10BC8-ND

Manufacturer Part#:

70T651S10BC8

Price: $ 91.62
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Asynchronous Memory IC 9Mb (256K...
DataSheet: 70T651S10BC8 datasheet70T651S10BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 83.29370
Stock 1000Can Ship Immediately
$ 91.62
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 9Mb (256K x 36)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Base Part Number: IDT70T651
Description

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The 70T651S10BC8 is a type of memory, which is commonly used in many commercial and industrial applications. It is one of the most popular and reliable types of memory because it offers high performance, low power consumption, and cost-effectiveness. In addition, it is also easy to install and configure, and provides reliable operation in a variety of environments.

The 70T651S10BC8 can be found in a variety of applications such as medical, military, and communications equipment. In addition, it is also used in embedded systems, automotive, and other industrial applications. It can also be found in a variety of computer applications such as desktop computers, laptops, and tablets. It can also be used in gaming consoles and set-top boxes.

The 70T651S10BC8 is a type of dynamic random access memory (DRAM). It is composed of small capacitors and circuits which store and process information. Information is stored as charges on the capacitors, while the circuits control the logic and timing of operations. The main benefit of this type of memory is that it can store large amounts of data, at very fast speeds, while still being very power efficient. The data stored in the memory will remain valid even when the power is turned off.

The 70T651S10BC8 is a multi-bit DRAM, which means that it can store multiple bits of information in each address location. This type of memory can be configured as a single data rate (SDR) or multiple data rate (MDR). In SDR mode, the data is stored as a single rate, while in MDR mode, it can store multiple bits of information in each address location. This makes it ideal for applications that require high speed and large capacity.

The 70T651S10BC8 works by using electrical signals called “clock cycles” to activate and deactivate its capacitors. These clock cycles serve as a time reference and tell the memory when to read and write data. This type of memory is highly reliable and durable, and can operate in a wide variety of environments and temperatures.

The 70T651S10BC8 is a type of memory that is widely used in many industrial and commercial applications. It provides high performance, low power consumption, and cost-effectiveness. In addition, it is easy to install and configure, and provides reliable operation in a variety of environments. Due to its high reliability and overall performance, the 70T651S10BC8 is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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