Allicdata Part #: | AFT09H310-04GSR6-ND |
Manufacturer Part#: |
AFT09H310-04GSR6 |
Price: | $ 95.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 70V 920MHZ NI1230-4GS |
More Detail: | RF Mosfet N-Channel 28V 680mA 920MHz 17.9dB 56W NI... |
DataSheet: | AFT09H310-04GSR6 Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 86.42200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 920MHz |
Gain: | 17.9dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 680mA |
Power - Output: | 56W |
Voltage - Rated: | 70V |
Package / Case: | NI-1230S-4 GW |
Supplier Device Package: | NI-1230S-4 GULL |
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The AFT09H310-04GSR6 is among the newest products available from stm semiconductor components. It is a radio frequency (RF) field effect transistor (FET) used in high frequency applications. An FET is a type of transistor that is able to amplify or switch signals. It is superior to other types of transistors due to its low power consumption, small size, and high speed. This particular RF FET is implemented in many professional-level radios, as it offers an impressive level of power output and efficiency.
The AFT09H310-04GSR6 is ideal for use in a variety of applications, such as low noise amplifiers, small signal switches, low noise oscillators, and high frequency amplifiers. It is particularly well-suited for wireless applications, as it is designed to operate with minimal energy consumption. It is also designed to provide a high level of linearity and power gain, which makes it well-suited for communications systems. The device is also well-suited to use in radar systems, as it is able to handle high frequencies with very low levels of distortion.
The working principle behind the AFT09H310-04GSR6 is relatively simple. The device is composed of an insulated gate and an output drain, which are connected via an input drain. The input drain is connected to a source power supply, and the output drain is connected to a load. When a signal is applied to the gate, a field of electrons forms around the gate. This creates a potential barrier between the input and output drains, and the signal can then be amplified or switched between them.
This design makes the AFT09H310-04GSR6 very efficient in its use of power. It also ensures a high level of linearity, as the signal is not disturbed by noise or other interference. This makes it ideal for use in communication systems, as it eliminates any background noise or distortion that could interfere with the signal. Additionally, the efficiency of the device ensures that it will not overheat due to prolonged exposure to high frequencies.
In summary, the AFT09H310-04GSR6 is a high-performance radio frequency field effect transistor. It is designed for use in a variety of applications, and its low power consumption, small size, and high speed make it ideal for use in wireless systems. Its simple working principle ensures a high level of linearity and power gain, making it well-suited for use in communications and radar systems. Overall, the AFT09H310-04GSR6 is an impressive device that provides excellent performance in high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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