Allicdata Part #: | AFT09S200W02SR3-ND |
Manufacturer Part#: |
AFT09S200W02SR3 |
Price: | $ 60.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | RF MOSFET LDMOS 4W PLD |
More Detail: | RF Mosfet |
DataSheet: | AFT09S200W02SR3 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 54.54270 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Description
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Introduction
The AFT09S200W02SR3 is transistor, otherwise known as a field-effect transistor (FET). It is a reliable solution for providing low-noise and stable signals in high-frequency applications. Specifically, the AFT09S20W02SR3 is a high-performance RF MOSFET. It is designed for use in RF power amplifier applications, such as cellular phones and portable communication devices.In this article, we will discuss the application field and working principle of the AFT09S20W02SR3 FET. We will begin by discussing the application field of the device and then move on to discussing the working principle. At the end of the article, we will provide a summary of the key points.Application Field
The AFT09S20W02SR3 RF MOSFET is a high-performance integrated circuit (IC) designed for high-frequency applications. It is optimized for operation at frequencies up to 2 GHz and features low distortion, low resistance and low noise. As such, it is suitable for a wide range of high-frequency amplifier applications, including cellular phones, portable communication devices, satellite receivers and GPS receivers.In addition, the AFT09S20W02SR3 is suitable for use in radioThe specific data is subject to PDF, and the above content is for reference
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