AFT09MS007NT1 Discrete Semiconductor Products

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The AFT09MS007NT1 is a RF MOSFET Transistor Device. It is designed for use as an amplifier, such as for use in low noise, high gain differential amplifiers. It was developed by Fujitsu Semiconductor and is available in a 3-pin SOT-323 package. It is rated to work over a wide voltage range and can handle a collector or drain current of up to 0.35A.

The AFT09MS007NT1 device is a N-channel enhancement-mode MOSFET transistor that operates over a wide range of frequencies from 10MHz up to 6GHz. It has a low on-resistance (RDS(on)) of 13.5 mOhm, which allows it to deliver high efficiency power at high frequencies. In addition to its low on-resistance and wide frequency range, it also features a low Gate-Threshold Voltage of 0.7 V. This allows it to be used in applications where a low voltage is required, such as battery-powered devices.

The AFT09MS007NT1 device has a wide range of potential applications. It can be used as a high efficiency, low noise amplifier for use in low noise, high gain differential amplifiers. It can also be used as a frequency converter in applications like frequency dividers and multipliers. It can also be used as an RF switch for use in radio receivers and transmitters.

The working principle of the AFT09MS007NT1 device is defined by the MOSFET properties. The basic operation of a MOSFET is based on the application of a voltage at the gate that controls the flow of current between source and drain. The Gate-Threshold voltage (VGS) is the voltage level at which the device begins to turn on. When a positive voltage is applied to the gate, the device turns on and allows current to flow between the source and the drain.

The AFT09MS007NT1 device also features a low Gate-Capacitance, which allows it to operate at high frequencies. This device also features an Avalanche-Proof capability, which protects against high voltage shocks at the gate.

In summary, the AFT09MS007NT1 is a high performance RF MOSFET transistor device that is designed for use as an amplifier in low noise, high gain differential amplifiers. It is rated to operate over a wide voltage range and can handle a collector or drain current of up to 0.35A. The device features low on-resistance, wide frequency range and low threshold voltage, which makes it suitable for a range of applications. The device also features low gate capacitance and avalanche-proof protection.

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