Allicdata Part #: | AFT09S282NR3-ND |
Manufacturer Part#: |
AFT09S282NR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 70V 960MHZ OM-780-2 |
More Detail: | RF Mosfet LDMOS 28V 1.4A 960MHz 20dB 80W OM-780-2 |
DataSheet: | AFT09S282NR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 80W |
Voltage - Rated: | 70V |
Package / Case: | OM-780-2 |
Supplier Device Package: | OM-780-2 |
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The AFT09S282NR3 is a Field Effect Transistor (FET), more particularly, a high elective, high-frequency Silicon Metal Oxide Semiconductor Field Effect Transistor (Si-MOSFET). The FET is a solid-state electronic device that can control electrical signals as well as current, between its sources and drains with the aid of voltage. Si-MOSFETs are essentially transistors that are used in radios and other communication devices, primarily to perform switching or amplifying functions. It is also used in high frequency power electronic applications, like television receivers and computer computers.
The AFT09S282NR3 is a RF Si-MOSFET that operates between a max frequency of 300MHz to 350MHz. It has a drain-source voltage of 28V, with a maximum drain current of 5A and a maximum gate source voltage of 20V. Being an N-Channel enhancement mode transistor, it requires a positive gate voltage for the drain current to flow, coming from an external source. This gate voltage can also be used to modify the drain current by controlling the signal applied to the gate, thus allowing for additional control over the device and providing improved use in a variety of applications.
The AFT09S282NR3 is able to function in a wide range of areas, such as audio amplifiers, battery-powered equipment, RF power amplifiers, RF switching, cellular base stations, and broadband circuitry. Furthermore, they are capable of providing high input resistance and fast switching, being excellent candidates for low power RF applications and have minimal noise generation. This makes it suitable for use as a switch in radio communication systems, especially when high speed functionality is required.
This transistor’s working principle can be easily understood. If a positive voltage is applied to the gate-source terminal and the drain-source voltage is higher than the threshold voltage, then current will be allowed to flow from the source to the drain. The amount of current that is allowed to flow is determined by the gate voltage, in that the higher the gate voltage, the higher the current will be. As such, this allows for efficient power handling and small package size, making the device much easier to handle and control.
In conclusion, the AFT09S282NR3 is a high-performance RF Si-MOSFET that is widely used in many electronic applications and communications equipment. It is able to provide high input resistance and fast switching, having minimal noise generation. This Si-MOSFET is suitable for use as a switch in radio communication systems, especially when high speed functionality is needed. Additionally, its working principle can be easily understood and its use enhances a range of different applications.
The specific data is subject to PDF, and the above content is for reference
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