AFT09MS031NR1 Discrete Semiconductor Products |
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Allicdata Part #: | AFT09MS031NR1TR-ND |
Manufacturer Part#: |
AFT09MS031NR1 |
Price: | $ 6.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 40V 870MHZ TO-270-2 |
More Detail: | RF Mosfet LDMOS 13.6V 500mA 870MHz 17.2dB 31W TO-2... |
DataSheet: | AFT09MS031NR1 Datasheet/PDF |
Quantity: | 500 |
500 +: | $ 5.88203 |
1000 +: | $ 5.39524 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 870MHz |
Gain: | 17.2dB |
Voltage - Test: | 13.6V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 31W |
Voltage - Rated: | 40V |
Package / Case: | TO-270AA |
Supplier Device Package: | TO-270-2 |
Base Part Number: | AFT09MS031 |
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The AFT09MS031NR1 is a radio frequency (RF) field-effect transistor (FET). This type of FET is designed to function as a switching amplifier in many different applications. The N-channel transistor is specifically designed to meet the requirements of high-frequency applications such as radio transmitters, radio receivers, and general-purpose RF amplifiers.
Basic Operation
FETs work on a simple principle in which the gate voltage of the transistor is used to control the conductivity of the source-drain path. When the gate voltage is increased, the source-drain current increases as well. This allows the transistor to act like a switch, which can be used to amplify signals or control power. The AFT09MS031NR1 operates slightly differently than most FETs, as it is designed to switch at relatively high frequency. It is also capable of handling more power compared to more traditional FETs.
Application Fields
The AFT09MS031NR1 is well suited for use in a variety of radio frequency applications. Its high-frequency operation and high power handling capabilities make it an ideal choice for use in radio transmitters, radio receivers, and general-purpose RF amplifiers. It can also be used in other applications such as high-frequency switching, gain control, and modulation. The transistor can handle up to 8 watts of power and its frequency range is from 0.1 MHz to 40 GHz.
Features and Benefits
The AFT09MS031NR1 offers many features and benefits when compared to other types of RF FETs. Its high power handling capabilities make it ideal for high-frequency applications that require more power than traditional transistors. It also offers superior impedance matching capabilities, allowing it to reduce reflections and minimize losses. The transistor also has very low gate-to-drain capacitance, which makes it suitable for use in high-speed applications. Finally, the transistor comes in a small and sturdy package, making it easy to mount and integrate into any circuit.
Conclusion
The AFT09MS031NR1 is an ideal choice for high-frequency applications such as radio transmitters, radio receivers, and general-purpose RF amplifiers. Due to its high power handling capabilities and low gate-to-drain capacitance, the transistor is able to meet the requirements of most high-frequency applications. It is available in a small, sturdy package and offers superior impedance matching and low losses. For all of these reasons, the AFT09MS031NR1 is a great choice for use in high-frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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