AO8801L Allicdata Electronics
Allicdata Part #:

AO8801L-ND

Manufacturer Part#:

AO8801L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2P-CH 20V 4.7 8TSSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 4.7A (Ta) 1.4W...
DataSheet: AO8801L datasheetAO8801L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: --
Supplier Device Package: 8-TSSOP
Description

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The AO8801L is a type of array field-effect transistor (FET) that utilizes conductive substrate technology, making them ideal for applications in high-power integrated circuits (ICs). The AO8801L offers superior performance characteristics such as low linearity and high power and temperature coefficients. It is a two-terminal device which can be used for voltage and current control. The FET array utilizes a four-terminal structure, which makes it suitable for switching and signal processing applications. The working principle of the AO8801L can be explained in terms of its internal structure.

The AO8801L consists of four field-effect transistors (FETs): the source (S), drain (D), gate (G), and body (B) terminals. The source is connected to ground, the drain is connected to a power supply, the gate is connected to a control signal, and the body is connected to a substrate or a bias voltage. The FETs are arranged in a four-terminal structure. This structure ensures that the FETs protect each other from damage due to unexpected voltages, currents, or temperatures.

The FETs act as switches, controlling the flow of current between the source and drain of the circuit. When a control signal is applied to the gate, it allows current to flow between the source and drain, allowing for fast switching of the circuit. The FETs can also control the voltage between source and drain of the circuit, which allows for more precise control of the circuit current. The body voltage, which can be set according to the application requirements, is also used to control the current flow between the source and drain.

The AO8801L has many applications in a variety of markets including automotive, industrial, and consumer electronics. It is ideal for use in high-power applications in power switching, drive circuits, and amplifiers. It is also used in applications such as voltage monitoring, current sensing, and pulse counting. The AO8801L also has a wide operating temperature range and robust construction, making it an ideal choice for long-term use in critical applications.

In conclusion, the AO8801L is an array FET that utilizes conductive substrate technology for high-performance integrated circuits. Its four-terminal structure makes it suitable for switching and signal processing applications. It is suitable for use in a variety of markets for high-power applications and has a wide operating temperature range. The AO8801L is a highly reliable device that is ideal for long-term use in critical applications.

The specific data is subject to PDF, and the above content is for reference

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