AO8810#A Allicdata Electronics
Allicdata Part #:

AO8810#A-ND

Manufacturer Part#:

AO8810#A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 20V 7A 8-TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7...
DataSheet: AO8810#A datasheetAO8810#A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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AO8810#A is an advanced transistors array designed for powe MOSFET applications. It is a self-contained array of eight (8) 2N-channel MOSFETs, divided into two (2) matched banks. It is a high performance, cost effective solution for multiple applications. Each MOSFET in the array is independently optimized during the manufacturing process to provide maximum performance and reliability.

AO8810#A Application Field

The AO8810#A transistors array can be used to replace multiple discrete components. This reduces the component count while maximising reliability, reducing manufacturing costs, and providing effective power control. The AO8810#A is applicable in a broad range of applications, such as in input/output, DC-DC converter, and lighting solutions. It can also be used for low side switching, demanding slow switching applications such as HVCMOS, and PCMCIA applications.

AO8810#A Working Principle

The AO8810#A is designed for low to medium power applications, and works on the principles of drain-source voltage, gate voltage, and drain current. The AO8810#A consists of a control (Gate) terminal and a drain/source terminal. When a positive gate-source voltage is applied, current flows from the drain to the source then the MOSFET is activated. Drain-source voltage varies the drain current while gate-source voltage controls the MOSFET. It can work in two modes: Linear mode and Saturation mode. In Linear mode, drain current is linearly proportional to drain-source voltage and drain-source resistance is low, while in Saturation mode, drain-source resistance is high and drain current is largely dependant on gate-source voltage.

AO8810#A Features

The AO8810#A transistors array offers high cost-performance ratio compared to a typical eight (8) discrete components solution. Some of the key features of the AO8810#A include:

  • Low on-resistance for high current flow and efficiency
  • Low Gate-to-Source/Gate-to-Source leakage
  • Low input capacitance for improved switching performance
  • High breakdown voltage for high voltage operation
  • High temperature range operation
  • Easy to install and use

Conclusion

The AO8810#A is a versatile transistors array designed to reduce component count, cost and improve reliability. It offers a wide array of features, such as low on-resistance, low gate-to-source and gate-to-source leakage, low input capacitance, high breakdown voltage, high temperature range operation and easy to install usage. The AO8810#A transistors array is suitable for high current, slow switching, and low power applications.

The specific data is subject to PDF, and the above content is for reference

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