AO8807L

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AO8807L is a logic level-driven, self-protected, high-efficiency, and low RDS(on)D-PAK MOSFET, suitable for many applications. It is capable of working in temperatures as low as -55°C to 175°C and has sixteen different levels of channel enhancement, with an output switch RDS(on) of 1.68mΩ at 10V. This MOSFET has three terminals namely Source, Gate, and Drain. It is designed to provide greater temperature and power handling capabilities with reduced on-resistance and costs, and is widely used in various applications because of its high efficiency, small size, low power consumption, and low noise.

The primary application of the AO8807L is as a power MOSFET in power switch and switching regulator designs, as well as metal oxide semiconductor field-effect transistor (MOSFET) drivers, LCD/LED displays, automotive and power amplifier designs, especially for battery-powered applications. It can also be used in high-temperature environments such as over-the-counter automotive and industrial applications, as well as in low-noise audio circuits and motor control circuits.

The AO8807L provides many advantages over other conventional MOSFETs, such as its dynamic high-voltage dielectric breakdown of 500V, lower on-resistance of only 1.68mΩ at 10V and less gate-charge with a 17nC gate-charge per unit area. It also has a very low gate-capacitance of 0.6pF, which helps reduce power losses.

The AO8807L utilizes the principle of “self-protection”. This means that when too much of the current flows, it will lower its threshold voltage and limit the current flow automatically. This ensures the device is not damaged and ensures improved safety when operating in extreme conditions.

In addition, this MOSFET features an advanced bipolar parallel architecture, which offers increased reliability and superior performance over conventional MOSFETs. It also features a very low power consumption, with a typical threshold voltage of 1V and a frequency response of 2.5GHz. This makes it suitable for many applications such as RF design and power control.

The AO8807L is extremely versatile and can be used in numerous applications that involve higher power handling and temperature operating range requirements, such as those seen in consumer electronics, automotive, industrial, and medical device applications.

The working principle of the AO8807L is based on the MOSFET structure, in which a high voltage applied to the Gate terminal will create an electric field which will be used to control the current flow from the Source to the Drain. This electric field causes the Source-Gate voltage (VGS) to adjust itself, controlling the current flow. As the Gate voltage (VGS) is lowered, the Drain-Source voltage (VDS) increases, resulting in increased current flow.

In conclusion, the AO8807L is a versatile, low RDS(on)D-PAK MOSFET with excellent power handling capabilities, low power consumption, and self-protection functions. Due to its wide range of applications, low cost, and high efficiency, it is one of the most popular MOSFETs on the market today.

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