AO8830 Discrete Semiconductor Products

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AO8830 is a type of power MOSFET array, specifically a dual N-channel MOSFET, composed of two inverter gates located inside a single package. AO8830 offers two N-channel MOSFETs, both of which are intended to switch continuously on and off a large variety of loads, both AC and DC. As it is configured in a dual-gate structure, both gates are capable of supplying up to 70A peak current rating (100A source-drain-diode peak current and -23V drain source voltage). This makes AO8830 ideal for use in various high-current applications.

The AO8830 uses an advanced design structure and fabrication techniques to achieve excellent performance and reliability. The device features an active cell gate structure, which makes it capable of efficiently switching heavy-duty loads with minimal switching loss and low gate drive current. The active cell gate structure also allows the device to achieve high speed switching, allowing higher switching frequencies to be implemented.

The AO8830 also features a wide range of on-board protection features, such as drain-source protection and over-temperature protection. This ensures that the device is capable of operating reliably in various high-current operating conditions. In addition, the device also offers low on-resistance and on-state voltage drop in order to provide efficient operation and reduce power consumption.

The AO8830 can be used in various applications, such as motor speed control, servo motor control, motor controllers, DC motor controllers, active filters, and AC motor controllers. It can also be used in various industrial applications, such as manufacturing automation and high-power industrial control systems. Moreover, the device can be used as a DC-AC converter, as well as a high-current protection circuit.

The working principle of AO8830 is based on the principle of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. A MOSFET is a type of field-effect transistor (FET) that uses a metal-oxide-semiconductor (MOS) gate structure. The MOSFET is composed of a gate, drain, and source, which are all insulated by a thin oxide layer. Depending on the polarity of the applied gate voltage, the MOSFET can either be in the ON state, where conduction occurs, or the OFF state, where no current flows through the device.

In the ON state, the gate voltage attracts electrons to the oxide surface, creating a depletion region surrounding the oxide layer. This creates a layer of positive charge on the drain side and a layer of negative charge on the source side, which form an electric field capable of allowing current to flow. When the gate voltage is reversed, the electric field is reversed, which causes the MOSFET to enter the OFF state.

As a power MOSFET, AO8830 exhibits superior performance in various applications. It is capable of efficiently controlling large current loads with minimal switching losses. Additionally, the device can handle large power dissipation due to its on-board protection features and low on-resistance and on-state voltage drop. With its wide range of uses and reliable performance, AO8830 is an ideal choice for use in high-power applications.

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