AO8810

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AO8810 is a low on-resistance dual N-Channel Enhancement Mode Field Effect Transistor array. It is constructed using Micro-Gate technology, which results in both high speed switching performance and low power dissipation. It is usually well-suited for power management, charging and protection applications in portable electronic devices. It is also widely used in a variety of industrial, automotive and consumer electronic applications.

The AO8810 consists of four N-Channel Field Effect Transistors (FETs) that are arranged in an inverted arrangement. Each FET can be independently controlled, providing flexibility in system design. Each FET has a source, gate and drain with a single common source connection. The array is operated in the enhancement mode, wherein the current flow is controlled by the gate-to-source voltage. This voltage is sometimes referred to as the “threshold voltage”, and the device will remain in the off state until the applied gate-to-source voltage exceeds this threshold voltage.

When the gate-to-source voltage is above the threshold voltage, current will be allowed to flow from the source to the drain. The gate voltage can then be used to regulate the current, allowing for precise control of the load. This makes the AO8810 suitable for a wide range of applications where high-speed, low power switching and/or current regulation is required. For example, the AO8810 can be used in battery protection circuits, portables, power management, smart switches, and more.

The AO8810 also features a low on-resistance feature that ensures minimal power loss when the device is in use. The on-resistance is typically less than 4 mΩ and is highly repeatable, allowing for a predictable performance across all devices. This low on-resistance further increases the efficiency of the device, making it suitable for applications where power efficiency is key.

In terms of circuit design, the AO8810 can be easily incorporated into existing power management solutions. It can be used as a direct replacement for an ordinary N-Channel MOSFET and is compatible with existing controllers and power supplies. Furthermore, the AO8810 can be used with low-voltage systems, as it has a lower gate threshold voltage, thus reducing the minimum operating voltage.

Overall, the AO8810 provides an economical and efficient solution for a wide range of power management and switching applications. With its compact size and low on-resistance, it can provide reliable and robust control, allowing for efficient operation in a variety of devices.

The specific data is subject to PDF, and the above content is for reference