AO8822

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The AO8822 is a monolithic dual IGBT (Insulated Gate Bipolar Transistor) array developed by Advanced Optoelectronic Technology. It is designed with two basic IGBT switches, each of which consists of a low-side and a high-side transistor. The AO8822 is ideal for applications that require high-voltage and high-current switching.

The AO8822 is suitable for a wide range of applications such as motor control, lighting control, and UPS/Inverter systems. It offers a wide operating temperature range and can handle up to 700V and 0.4A for the low-side FET and up to 600V and 0.6A for the high-side FET. It is optimized for fast switching, high-energy conservation, and excellent reliability.

The working principle of the AO8822 involves the semiconductor components on each side becoming the conductor, or the switch, in order to create a field-effect transistor (FET). When an input voltage is applied, electrons move to the opposite side and a current is created. The current is then amplified and is used as an output.

The AO8822’s integrated IGBT gate driver circuitry provides gate drive voltage to each side and senses the voltage on each side. The gate driver is mounted inside the package with the two FETs. This ensures reliable, fast, and efficient switching.

In addition to the IGBTs, the AO8822 also has protection circuits that protect the power device against over-voltage and over-current conditions. It also features a thermal shutdown that activates if the junction temperature of either IGBT is too high, which ensures the safe operation of the device.

The AO8822 is a versatile, robust, and reliable device that is suitable for a wide range of applications. It is a great option for applications that require high-voltage and high-current switching, and its integrated gate driver circuitry makes it easy to use. The protection circuits and thermal shutdown feature of the AO8822 also make it an ideal choice for applications where safety and reliability are paramount.

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