AOD3N50_004

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AOD3N50_004 is a high voltage MOSFET produced by UMC Semiconductor that can be utilized in a wide variety of high-voltage N-Channel enhancement mode applications. In terms of its architecture, AOD3N50_004 is a single, insulated gate field effect transistor (FET) featuring a metal oxide semiconductor (MOS) structure. This type of device is useful for applications in which an extremely high voltage value is required in a very small package size. It can be used in switching converters, isolated/direct gate drive circuits, high voltage power supplies, etc.

In terms of its electricity carrying parameters, the AOD3N50_004 has an absolute maximum drain-source voltage (VDS) of 500V, a drain-source on-state resistance (RDSon) of 0.65Ω at a gate source voltage (VGS) of 10V, and a continuous drain current (ID) of 9A. This high voltage field effect transistor also has an impressive thermal resistance junction-to-case (RθJC) of 0.6K/W and an impressive Ld-package with a low junction capacitance (CJ).

Due to its impressive power parameters, the AOD3N50_004 can be used in a variety of high voltage applications, such as high voltage automotive designs, power converters, power factor correction, flyback and other isolated/direct gate drive circuits, and high voltage power supplies. In addition, this device is suitable for applications where a very low peak gate charge and a fast switching time are required, such as resonant converter applications or pulse width modulated (PWM) control topologies.

The working principle of the AOD3N50_004 involves the utilization of MOS transistors. MOS transistors, or metal-oxide semiconductor transistors, are widely used as either enhancement capacitors or depletion capacitors in a variety of high-voltage transistor applications. In a MOS transistor, the gate, source and drain are arranged in a triangular pattern. When a positive voltage is applied to the gate, an electric field is created in the oxide underneath, which can then trigger the switching mechanism of the device.

When a positive voltage VGS is applied to the gate of the AOD3N50_004, the channel region below it begins to fill up with electrons from the source, which then connects the source and the drain. This connection creates an increase in current flow (ID) between the source and the drain, which is why the drain current is often referred to as the “ON” current. As the gate voltage VGS increases, the current flow ID increases further, allowing it to reach its desired level.

This current flow is limited by the value of the drain-source on-state resistance (RDSon), which is a measure of the total resistance between the drain and the source of the transistor. The lower the value, the higher the current that can flow through the device. The AOD3N50_004 has an RDSon of 0.65Ω at 10V VGS, allowing it to reach a maximum current of 9A.

In summary, the AOD3N50_004 is a MOSFET produced by UMC Semiconductor that possesses a high VDS of 500V, a low RDSon of 0.65Ω, a fast switching speed and a high ID current of 9A. This device is suitable for a wide range of high-voltage N-channel enhancement mode applications, such as switched converters, isolated/direct gate drive circuits, and high voltage power supplies. It works by creating an electric field below the gate, which then triggers a connection between the source and the drain, thus allowing an increase in current flow.

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