AOD3N50M Allicdata Electronics
Allicdata Part #:

AOD3N50M-ND

Manufacturer Part#:

AOD3N50M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH TO252
More Detail: N-Channel
DataSheet: AOD3N50M datasheetAOD3N50M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: --
Supplier Device Package: --
Package / Case: --
Description

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AOD3N50M is a metal oxide field-effect transistor (MOSFET) developed by Infineon Technologies AG, a German microelectronics company. It belongs to the single-gate type metal oxide semiconductor field-effect transistors family or simply the MOSFET family. It is a voltage-controlled device that uses an oxide layer to control the current passing through it. It is designed to operate in high-power applications and is typically used in power electronics, high-power audio amplifiers, motor drives, and other applications requiring high voltage and current handling capability.

The AOD3N50M is a fairly standard MOSFET, constructed with a single gate, three terminals, and a copper drain. It is one of the most popular forms of transistor available, as it is relatively cheap, versatile and easy to use. It is also capable of providing high-power performance.

The AOD3N50M has a drain-source voltage (VDS) of 50V, which is more than sufficient for most applications, and a maximum drain current (ID) of 3A. The break-down voltage (BV) is 600V, which is perfect for most power electronics applications. Additionally, the transistor has a low total gate charge (Qg) of 3.5nC, offering a smooth switching response and better current ratings than standard MOSFETs.

When using an AOD3N50M in a circuit, the source terminal is connected to the source voltage, the gate terminal receives a control signal from the circuit, and the drain terminal is connected to the load. When the control signal at the gate is logic high, some of the source voltage is applied to the gate of the MOSFET, which makes the connection between the source and the drain, allowing current to flow from the source to the drain. On the other hand, when the control signal at the gate is logic low, the connection between the source and the drain gets blocked, thus preventing the current flow.

For safety purposes, the AOD3N50M must be connected to a heat sink when working in applications that require high voltages and currents. The device is also rated for a junction temperature of 150℃ but should not be loaded beyond its maximum ratings to prevent over-temperature damage.

Aside from its ease of use and low cost, the AOD3N50M is a reliable and versatile MOSFET that offers high power performance. It is a great choice for applications that require efficient electrical control, including motor drives, high-power audio amplifiers, power electronics, and more.

The specific data is subject to PDF, and the above content is for reference

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