Allicdata Part #: | 785-1620-2-ND |
Manufacturer Part#: |
AOD3N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 800V 2.8A TO252 |
More Detail: | N-Channel 800V 2.8A (Tc) 83W (Tc) Surface Mount TO... |
DataSheet: | AOD3N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.8 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AOD3N80 is a MOSFET device is a high-voltage, high-performance, logic-level N-channel attenuator with high speed, low power consumption and low on-resistance. It is designed to minimize switching times by providing low gate charge and fast gate amplification. In addition, it can be configured with multiple gate control configurations, making it suitable for a variety of applications. It is the ideal choice for applications ranging from the power supply design to the sensor circuit design, automotive applications and high frequency switching.
The AOD3N80 is based on the power MOSFET technology, featuring high-voltage performance, low on-resistance, low gate charge and high current carrying capability. Its extremely low on-resistance makes it suitable for applications that require high-voltage electric current control. In addition, its low gate charge and fast switching time make it ideal for switching applications in high-bandwidth circuits. Furthermore, its high operating temperature range and high frequency capability make it suitable for a variety of industrial, automotive and military applications.
The AOD3N80 is available in two configurations: a single and a dual channel device. The single-channel device is designed for applications that require a low gate charge and only one gate control. The dual channel device is designed for applications that require two gate control signals. The AOD3N80 is available in several package types: TO-263, SOT-223, SOT-89 and SOT-23.
The basic working principle of the AOD3N80 is the same as other MOSFET devices. When the gate voltage is applied, it provides low on-resistance and fast switching times. The gate charge of the AOD3N80 is very low, making it suitable for applications which need low gate-charge and fast switching times. The speed of the device is a function of the gate charge, drain-to-source voltage, and the on-resistance.
The AOD3N80 is widely used in a variety of applications such as power supply design, motor control, high frequency switching and automotive applications. It is also used in sensor circuit designs, where low on-resistance, fast switching and low gate charge are required. In addition, it can also be used in high voltage switching applications such as DC-DC converter and flyback transformer designs.
The AOD3N80 is an ideal choice for applications that require low-voltage, high-performance, and low-power MOSFET. It offers excellent performance in terms of on-resistance, switching times and gate charge, making it the ideal choice for power supply design, sensor designs, and high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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