AOD5B65N1 Discrete Semiconductor Products |
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Allicdata Part #: | AOD5B65N1-ND |
Manufacturer Part#: |
AOD5B65N1 |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | IGBT 650V 5A TO252 |
More Detail: | IGBT 650V 10A 52W Surface Mount TO-252, (D-Pak) |
DataSheet: | AOD5B65N1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
2500 +: | $ 0.21486 |
Switching Energy: | 81µJ (on), 49µJ (off) |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 170ns |
Test Condition: | 400V, 5A, 60 Ohm, 15V |
Td (on/off) @ 25°C: | 8ns/73ns |
Gate Charge: | 9.2nC |
Input Type: | Standard |
Series: | Alpha IGBT™ |
Power - Max: | 52W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 5A |
Current - Collector Pulsed (Icm): | 15A |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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IGBT, which stands for insulated gate bipolar transistor, is a wide bandgap semiconductor device designed for high-power switching applications. The AOD5B65N1 product is one of a number of IGBTs, which are used to switch large amounts of power in consumer and industrial applications. IGBTs are crafted to handle voltage and current levels that can be found in large transformers, motors, and electric vehicles. The device is manufactured by Infineon Technologies.
Application Field
The AOD5B65N1 is a single IGBT module with a voltage rating of 650 volts. It is a three-phase device constructed with an insulated gate bipolar transistor (IGBT) and free-wheeling diodes. It is manufactured using surface-mount technology and comes in a low-profile and compact package. This type of IGBT is designed for switched-mode power supplies, motor and lighting controls, uninterruptible power supplies, and battery-powered drives. The device has a low on-resistance and is suitable for applications that require high speed, high efficiency, and high reliability.
Working Principle
The working principle of IGBTs is based on the behaviour of the bipolar transistor and the field-effect transistor. When the base current is driven from the gate, the IGBT is turned on, as the junction between the p-type and n-type material is now forward-biased, allowing a current to flow. The device also has a diode, which conducts the current when the transistor is biased in the reverse direction.
The IGBT has many advantages compared to other switching devices, such as its fast switching speed. The device also has a significantly lower power loss than other variants, as well as lower forward voltage drop and higher lifting capacity. Furthermore, the device has a wide range of operation which enables it to be used in various applications.
The AOD5B65N1 device is a high power, single IGBT that has a voltage rating of 650 volts. It is designed for use in a variety of power switching applications, such as switched-mode power supplies, motor and lighting controls, uninterruptible power supplies, and battery-powered drives. Its working principle is based on the behaviour of the bipolar transistor and the field-effect transistor, and it has numerous advantages compared to other switching devices.
The specific data is subject to PDF, and the above content is for reference
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