AOD5B65N1 Allicdata Electronics

AOD5B65N1 Discrete Semiconductor Products

Allicdata Part #:

AOD5B65N1-ND

Manufacturer Part#:

AOD5B65N1

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 650V 5A TO252
More Detail: IGBT 650V 10A 52W Surface Mount TO-252, (D-Pak)
DataSheet: AOD5B65N1 datasheetAOD5B65N1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.21486
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Switching Energy: 81µJ (on), 49µJ (off)
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 170ns
Test Condition: 400V, 5A, 60 Ohm, 15V
Td (on/off) @ 25°C: 8ns/73ns
Gate Charge: 9.2nC
Input Type: Standard
Series: Alpha IGBT™
Power - Max: 52W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Current - Collector Pulsed (Icm): 15A
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 650V
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Lead Free Status / RoHS Status: --
Part Status: Active
Description

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IGBT, which stands for insulated gate bipolar transistor, is a wide bandgap semiconductor device designed for high-power switching applications. The AOD5B65N1 product is one of a number of IGBTs, which are used to switch large amounts of power in consumer and industrial applications. IGBTs are crafted to handle voltage and current levels that can be found in large transformers, motors, and electric vehicles. The device is manufactured by Infineon Technologies.

Application Field

The AOD5B65N1 is a single IGBT module with a voltage rating of 650 volts. It is a three-phase device constructed with an insulated gate bipolar transistor (IGBT) and free-wheeling diodes. It is manufactured using surface-mount technology and comes in a low-profile and compact package. This type of IGBT is designed for switched-mode power supplies, motor and lighting controls, uninterruptible power supplies, and battery-powered drives. The device has a low on-resistance and is suitable for applications that require high speed, high efficiency, and high reliability.

Working Principle

The working principle of IGBTs is based on the behaviour of the bipolar transistor and the field-effect transistor. When the base current is driven from the gate, the IGBT is turned on, as the junction between the p-type and n-type material is now forward-biased, allowing a current to flow. The device also has a diode, which conducts the current when the transistor is biased in the reverse direction.

The IGBT has many advantages compared to other switching devices, such as its fast switching speed. The device also has a significantly lower power loss than other variants, as well as lower forward voltage drop and higher lifting capacity. Furthermore, the device has a wide range of operation which enables it to be used in various applications.

The AOD5B65N1 device is a high power, single IGBT that has a voltage rating of 650 volts. It is designed for use in a variety of power switching applications, such as switched-mode power supplies, motor and lighting controls, uninterruptible power supplies, and battery-powered drives. Its working principle is based on the behaviour of the bipolar transistor and the field-effect transistor, and it has numerous advantages compared to other switching devices.

The specific data is subject to PDF, and the above content is for reference

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