Allicdata Part #: | AOD518_050-ND |
Manufacturer Part#: |
AOD518_050 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 15A TO252 |
More Detail: | N-Channel 30V 15A (Ta), 54A (Tc) 2.5W (Ta), 50W (T... |
DataSheet: | AOD518_050 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 951pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 54A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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AOD518_050 is a high-performance power MOSFET, which is also known as an enhancement mode device.
It is designed to optimize the device performance and to maximize the efficiency, power density and gate capacitance, leading to better performance in terms of switching speed, current handling capability and power dissipation. The device has a wide operating temperature range, which is ideal for high temperature applications where high voltage and low current dissipations are required.
AOD518_050 can be used in different applications such as power MOSFET, mobile battery charger and HV driver ICs. It can also be used as a power device in automotive, consumer electronics and industrial applications. Its body diode can withstand up to 30V of VDS and offers low forward voltage drop.
The device is designed to provide excellent performance and reliability. It has a high channel temperature coefficient, which helps in reducing device power dissipation, and offers a very low on-state resistance. The device also has a high Gate-Source Reverse Capacitance for extremely low switching losses.
AOD518_050\'s working principle is simple. It is based on the transfer of electrons between the gate and drain terminals. When a voltage is applied to the gate, electrons move from the substrate to the gate and constitute a channel. As the number of electrons increases, the gate’s electric field increases and the channel size increases, thus causing the gate current to increase. As a result, the current flowing between the drain and source increases, leading to an increased electrical supply.
The device is also designed to provide very low power losses. It is integrated with a drain side temperature monitor, which can provide an efficient way to control power dissipation. The device also has a large gate breakdown voltage and can withstand large transient voltages.
AOD518_050 is an extremely versatile power MOSFET designed to operate at high voltages and temperatures, and offers low energy losses. It is an ideal solution for a wide variety of applications including power management, communications, digital signal, automotive, consumer electronics and medical applications.
The specific data is subject to PDF, and the above content is for reference
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