AOD516_002 Allicdata Electronics
Allicdata Part #:

AOD516_002-ND

Manufacturer Part#:

AOD516_002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 18A
More Detail: N-Channel 30V 18A (Ta), 46A (Tc) 2.5W (Ta), 50W (T...
DataSheet: AOD516_002 datasheetAOD516_002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1229pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 46A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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AOD516_002 is a type of single-channel n-channel transistor that is widely used in modern electronic devices. Basically, it works as a switch, providing a controlled electric current to the circuit when activated. This type of transistor is widely used in logic circuits and analog circuits, as well as in power applications.

The AOD516_002 is a MOSFET (metal oxide semiconductor Field-Effect Transistor) which makes use of the metal oxide insulator in the gate region of the device. The application of a gate voltage Vgs turns the MOSFET into an on state, allowing a flow of electric current through the device.

The common source amplifier of an AOD516_002 is capable of producing a high-power output compared to the other types of transistors and is thus mainly advisable for high-powered circuits. It also has a low input and output capacitance, which is beneficial for signals with high frequency and provides good switching performance.

The working principle of the AOD516_002 is based on the fact that it works as a switch, providing a controlled electric current to the circuit when activated. The gate voltage of the MOSFET determines whether it is in the ON or OFF state, and the voltage levels at which it can be operated depend on the structure of the device. When the gate voltage is at the on-state threshold, the current flowing through the MOSFET is equal to the saturation current. If the gate voltage is higher than the off-state threshold, the MOSFET will be completely turned off.

To use the AOD516_002 properly, the designers have to pay attention to its two major parameters: the drain-source voltage and the drain current. The maximum drain source voltage that can be applied to the device decides how much power the MOSFET can handle without burning out. The maximum drain current depends on the package type of the device and should be self-adjusted by measuring the device parameters on the current.

In summary, the AOD516_002 is a single-channel n-channel transistor that can be used for a variety of applications due to its good switching performance and low input and output capacitance. It is a versatile device that is widely used in high-powered logic and analog circuits. By properly setting the maximum drain source voltage and drain current, the device can be safely and efficiently operated.

The specific data is subject to PDF, and the above content is for reference

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