Allicdata Part #: | 785-1358-2-ND |
Manufacturer Part#: |
AOD516 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 18A TO252 |
More Detail: | N-Channel 30V 18A (Ta), 46A (Tc) 2.5W (Ta), 50W (T... |
DataSheet: | AOD516 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1229pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta), 46A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AOD516 Application Field and Working Principle
AOD516 (Advanced Organic Device) is a novel three-dimensional (3D) field-effect transistor (FET) which is the world’s first device to showcase organic electronic components. It has gained significant attention in the electronics industry due to its unique benefits and various applications. This article will focus on the application field of AOD516 and its working principle.
AOD516 Application Field
AOD516 can be used in a variety of electronics applications, including:
- High-density and ultrafast logic circuits
- Low-power circuits for consumer electronics and appliances
- Large-scale integrated circuits for digital systems
- Memory devices
- Lighting and display devices
- Radar, ultrasound and imaging systems
- Power switches and power management devices
- Robotics and manufacturing
- Medical and healthcare equipment
- Communication systems
AOD516 holds promise for a range of applications due to its unique capabilities and high integration density. It can sustain relatively high voltages (up to 35V), has high power-handling capability (up to 5W), and has highly-tunable characteristics. Its low-power operation and ultra-fast response time make it suitable for low-power circuits and large-scale applications such as digital systems, communication systems and consumer electronics. Its unique 3D architecture also makes it a promising candidate for memory devices and large-scale integrated circuits (LSIs). Also, its low-power operation and small size enable it to be used for powerful small-sized portable devices such as mobile phones and lighting systems. Furthermore, its high power-handling capability and cost-effectiveness makes it ideal for use in large scale industrial and military applications such as power switches and robotics.
AOD516 Working Principle
AOD516 has metal-oxide-based FETs and organic transistors that are arranged vertically in a 3D structure. The 3D architecture ensures a highly efficient current flow, which increases the power-handling capability and current-driving capacity of the device. The metal-oxide-based FETs form the gate and source of the device, while the organic transistors are connected at the drain end. The organic transistors are formed with two layers of semiconductor materials, a organic gate insulator, and two metal contacts.
When voltage is applied to the top contact, an electric field-effect is generated and electrons are displaced in the semiconductor layers, creating an inversion layer on the interface between the two. This forms a conducting channel through which current can flow. The output current is determined by the gate voltage and can be adjusted by the gate voltage.
The AOD516 is a highly efficient device with a wide range of applications. It has a high integration density and can be used for low-power circuits, high-powered applications and even large-scale integrated circuits. Its high power-handling capability and cost-effectiveness make it ideal for industrial and military applications, and it is also suitable for consumer electronics and communication systems. Furthermore, its 3D architecture enables it to be used for memory devices and LSIs as well.
The specific data is subject to PDF, and the above content is for reference
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